Thin-film transistors fabricated with poly-si films crystallized at low temperature by microwave annealing

IEEE Electron Device Letters

Volumn 20, Issue 1, 1999, Pages 2-4

  Choi, Yong Woo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Crystallization; Microwave; TFT

Indexed keywords

EID: 0002957505     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.737555     Document Type: Article

References (2)

1. T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, "Low temperature fabrication of high mobility poly-Si TFT's for large-area LCD's," IEEE Trans. Electron Devices, vol. 36, pp. 1929-1933, 1989.
2. M. K. Hatalis and D. W. Greve, "Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films," J. Appl. Phys., vol. 63, pp. 2260-2266, 1988.