A reliability model for low-temperature polycrystalline silicon thin-film transistors

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 392-394

  Chen, Chih Yang ^a   Lee, Jam Wem ^b   Lee, Po Hao ^a   Chen, Wei Cheng ^c   Lin, Hsiao Yi ^c   Yeh, Kuan Lin ^c   Ma, Ming Wen ^a   Wang, Shen De ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c InnoLux Display Corporation   (Taiwan)

Author keywords

Hot carrier stress (HCS); Low temperature polycrystalline silicon thin film transistors (LTPS TFTs); Negative bias temperature instability (NBTI); Reliability

Indexed keywords

HOT CARRIERS; POLYSILICON; RELIABILITY; THERMODYNAMIC STABILITY;

HOT CARRIER STRESS; NEGATIVE BIAS TEMPERATURE INSTABILITY;

THIN FILM TRANSISTORS;

EID: 34247636246     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895454     Document Type: Article

References (16)

1. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and T. Tsuchihashi, "Analysis of hot carrier effects in low temperature poly-Si TFTs using device simulator," in Proc. IEEE Int. Conf. Microelectron. Test Struct., 2001, pp. 251-256.
2. E.-X. Zhao, J. Chan, J. Zhang, A. Marathe, and K. Taylor, "Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs," in Proc. IEEE Int. Integr. Reliab. Workshop Final Report, 1999, pp. 113-115.
3. T. Yoshida, K. Yoshino, M. Takei, A. Hara, N. Sasaki, and T. Tsuchiya, "Experimental evidence of grain-boundary related hot-carrier degradation mechanism in low-temperature poly-Si thin-film transistors," in IEDM Tech. Dig., 2003, pp. 219-222.
4. N. A. Hastas, C. A. Dimitriadis, J. Brini, and G. Kamarinos, "Hot-carrier-induced degradation in short p-channel nonhydrogenated polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 49, no. 9, pp. 1552-1557, Sep. 2002.
5. J. H. Stathis and S. Zafar, "The negative bias temperature instability in MOS devices: A review," Microelectron. Reliab., vol. 46, no. 2-4, pp. 270-286, Feb.-Apr. 2006.
6. C. E. Blat, E. H. Nicollian, and E. H. Poindexter, "Mechanism of negative-bias-temperature instability," J. Appl. Phys., vol. 63, no. 3, pp. 1712-1720, Feb. 1991.
7. 2 interface," Phys. Rev. B, Condens. Matter, vol. 51, no. 7, pp. 4218-4230, Feb. 1995.
8. D. K. Schroder and J. A. Babcock, "Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing," J. Appl. Phys., vol. 94, no. 1, pp. 1-18, Jul. 2003.
9. S. Maeda, S. Maegawa, T. Ipposhi, H. Nishimura, T. Ichiki, J. Mitsuhashi, M. Ashida, T. Muragishi, and T. Nishimura, "Negative bias temperature instability in poly-Si TFTs," in VLSI Symp. Tech. Dig. 1993, pp. 29-30.
10. E. Li, E. Rosenbaum, L. F. Register, J. Tao, and P. Fang, "Hot carrier induced degradation in deep submicron MOSFETs at 100 °C," in Proc. IRPS, 2000, pp. 103-107.
11. A. T. Krishnan, V. Reddy, and S. Krishnan, "Impact of charging damage on negative bias temperature instability," in IEDM Tech. Dig., 2001, pp. 39.3.1-39.3.4.
12. C.-Y. Chen, J.-W. Lee, S.-D. Wang, M.-S. Shieh, P.-H. Lee, W.-C. Chen, H.-Y. Lin, K.-L. Yeh, and T.-F. Lei, "Negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 2993-3000, Dec. 2006.
13. Y. Tour and T. H. Ning, Fundamentals of Modern VLSI Devices, vol. 123. Cambridge, U.K.: Cambridge Univ. Press, 1998.
14. E. Takeda and N. Suzuki, "An empirical model for device degradation due to hot-carrier injection," IEEE Electron Device Lett., vol. EDL-4, no. 4, pp. 111-113, Apr. 1983.
15. T.-J. King, M. G. Hack, and I.-W. Wu, "Effective density-of-states distributions for accurate modeling of polycrystalline-silicon thin-film transistors," J. Appl. Phys., vol. 75, no. 2, pp. 908-913, Jan. 1994.
16. P. Heremans, R. Bellens, G. Groeseneken, and H. E. Maes, "Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs," IEEE Trans. Electron Devices, vol. 35, no. 12, pp. 2194-2209, Dec. 1988.