An analytical hot-carrier induced degradation model in polysilicon TFTs

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2182-2186

  Hatzopoulos, Argyrios T ^b   Tassis, Dimitrios H ^b   Hastas, Nikolaos A ^b   Dimitriadis, Charalabos A ^a,b   Kamarinos, George ^c  

^a IEEE   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c CNRS   (France)

Author keywords

Estimation of damaged region; Hot carriers; Polysilicon thin film transistors (TFTs)

Indexed keywords

ESTIMATION OF DAMAGED REGION; POLYSILICON THIN-FILM TRANSISTORS (TFT); STRESS TIME;

AMORPHOUS SILICON; ELECTRON MOBILITY; HOT CARRIERS; THIN FILM TRANSISTORS;

MATHEMATICAL MODELS;

EID: 33745654212     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856178     Document Type: Article

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