-
1
-
-
4744346695
-
Recent progress in study on material removal mechanisms of silicon wafer during chemical mechanical polishing
-
(In Chinese)
-
Zhao Y.W., and Liu J.J. Recent progress in study on material removal mechanisms of silicon wafer during chemical mechanical polishing. Tribology 24 3 (2004) 283-287 (In Chinese)
-
(2004)
Tribology
, vol.24
, Issue.3
, pp. 283-287
-
-
Zhao, Y.W.1
Liu, J.J.2
-
2
-
-
0026260129
-
Chemical mechanical polishing for fabricating patterned W metal features as chip interconnects
-
Kaufman F.B., Thompson D.B., Broadie R.E., Jaso M.A., Guthrie W.L., Pearson D.J., and Small M.B. Chemical mechanical polishing for fabricating patterned W metal features as chip interconnects. J. Electrochem. Soc. 138 11 (1991) 3460-3465
-
(1991)
J. Electrochem. Soc.
, vol.138
, Issue.11
, pp. 3460-3465
-
-
Kaufman, F.B.1
Thompson, D.B.2
Broadie, R.E.3
Jaso, M.A.4
Guthrie, W.L.5
Pearson, D.J.6
Small, M.B.7
-
3
-
-
0345829159
-
Material removal mechanisms in lapping and polishing
-
Evans C.J., Paul E., Dornfeld D., Lucca D.A., Byme G., Tricard M., Klocke F., Dambon O., and Mullany B.A. Material removal mechanisms in lapping and polishing. Ann. CIRP 152 (2003) 611-633
-
(2003)
Ann. CIRP
, vol.152
, pp. 611-633
-
-
Evans, C.J.1
Paul, E.2
Dornfeld, D.3
Lucca, D.A.4
Byme, G.5
Tricard, M.6
Klocke, F.7
Dambon, O.8
Mullany, B.A.9
-
4
-
-
18744384223
-
Progress in material removal mechanisms of surface polishing with ultra precision
-
Xu J., Luo J.B., Lu X.C., Zhang C.H., and Pan G.S. Progress in material removal mechanisms of surface polishing with ultra precision. Chin. Sci. Bull. 49 16 (2004) 1687-1693
-
(2004)
Chin. Sci. Bull.
, vol.49
, Issue.16
, pp. 1687-1693
-
-
Xu, J.1
Luo, J.B.2
Lu, X.C.3
Zhang, C.H.4
Pan, G.S.5
-
5
-
-
34249002660
-
On the CMP material removal at the molecular scale
-
Chang L. On the CMP material removal at the molecular scale. J. Tribol. 129 (2007) 436-437
-
(2007)
J. Tribol.
, vol.129
, pp. 436-437
-
-
Chang, L.1
-
6
-
-
34548292125
-
Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale
-
Wang Y.G., Zhao Y.W., An W., and Wang J. Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale. Appl. Surf. Sci. 253 23 (2007) 9137-9141
-
(2007)
Appl. Surf. Sci.
, vol.253
, Issue.23
, pp. 9137-9141
-
-
Wang, Y.G.1
Zhao, Y.W.2
An, W.3
Wang, J.4
-
7
-
-
2042436424
-
Polishing pad morphology and chemical mechanical planarization
-
Mejia D.C., Kelchner J., and Beaudoin S. Polishing pad morphology and chemical mechanical planarization. J. Electrochem. Soc. 151 4 (2004) G271-G278
-
(2004)
J. Electrochem. Soc.
, vol.151
, Issue.4
-
-
Mejia, D.C.1
Kelchner, J.2
Beaudoin, S.3
-
8
-
-
35648997001
-
Modeling the effects of abrasive size, surface oxidizer concentration and binding energy on chemical mechanical polishing at molecular scale
-
Wang Y.G., Zhao Y.G., and Li X.F. Modeling the effects of abrasive size, surface oxidizer concentration and binding energy on chemical mechanical polishing at molecular scale. Tribol. Int. 41 (2008) 202-210
-
(2008)
Tribol. Int.
, vol.41
, pp. 202-210
-
-
Wang, Y.G.1
Zhao, Y.G.2
Li, X.F.3
-
9
-
-
0035338991
-
Material removal mechanism in chemical mechanical polishing: theory and modeling
-
Luo J., and Dornfeld D.A. Material removal mechanism in chemical mechanical polishing: theory and modeling. IEEE. Trans. Semiconduct. Manuf. 14 2 (2001) 112-133
-
(2001)
IEEE. Trans. Semiconduct. Manuf.
, vol.14
, Issue.2
, pp. 112-133
-
-
Luo, J.1
Dornfeld, D.A.2
-
10
-
-
15044360806
-
A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing
-
Jeng Y.R., and Huang P.Y. A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing. J. Tribol. 127 (2005) 190-197
-
(2005)
J. Tribol.
, vol.127
, pp. 190-197
-
-
Jeng, Y.R.1
Huang, P.Y.2
-
11
-
-
24744466890
-
A scratch intersection model of material removal during chemical mechanical planarization (CMP)
-
Che W., Guo Y.J., Chandra A., and Bastawros A. A scratch intersection model of material removal during chemical mechanical planarization (CMP). J. Manuf. Sci. Eng. 127 (2005) 545-554
-
(2005)
J. Manuf. Sci. Eng.
, vol.127
, pp. 545-554
-
-
Che, W.1
Guo, Y.J.2
Chandra, A.3
Bastawros, A.4
-
14
-
-
13844254361
-
A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing
-
Chen P.S., Huang B.W., and Shih H.C. A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing. Thin Solid Films 476 (2005) 130-136
-
(2005)
Thin Solid Films
, vol.476
, pp. 130-136
-
-
Chen, P.S.1
Huang, B.W.2
Shih, H.C.3
-
15
-
-
0037307324
-
A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species
-
Zhao Y.W., Chang L., and Kim S.H. A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species. Wear 254 (2003) 332-339
-
(2003)
Wear
, vol.254
, pp. 332-339
-
-
Zhao, Y.W.1
Chang, L.2
Kim, S.H.3
-
16
-
-
34248571005
-
CMP: the balance in chemical mechanical polishing
-
CMP: the balance in chemical mechanical polishing. J. Electrochem. Soc. 10 7 (2007) H213-H216
-
(2007)
J. Electrochem. Soc.
, vol.10
, Issue.7
-
-
Paul, E.1
-
17
-
-
34548540315
-
A mathematical model for material removal and chemical mechanical synergy in chemical mechanical polishing at molecular scale
-
Bai J., Zhao Y.W., and Wang Y.G. A mathematical model for material removal and chemical mechanical synergy in chemical mechanical polishing at molecular scale. Appl. Surf. Sci. 253 20 (2007) 8489-8494
-
(2007)
Appl. Surf. Sci.
, vol.253
, Issue.20
, pp. 8489-8494
-
-
Bai, J.1
Zhao, Y.W.2
Wang, Y.G.3
-
18
-
-
0032674817
-
Effect of particles size during tungsten chemical mechanical polishing
-
Bielman M., Mahajan U., and Singh R.K. Effect of particles size during tungsten chemical mechanical polishing. Electrochem. Soild-State Lett. 2 8 (1999) 401-403
-
(1999)
Electrochem. Soild-State Lett.
, vol.2
, Issue.8
, pp. 401-403
-
-
Bielman, M.1
Mahajan, U.2
Singh, R.K.3
-
20
-
-
2342521235
-
Experimental investigation on mechanisms of silicon chemical mechanical polishing
-
Estragnat E., Tang G., Liang H., Jahanmir S., Pei P., and Martin J.M. Experimental investigation on mechanisms of silicon chemical mechanical polishing. J. Electron. Mater. 33 4 (2004) 334-339
-
(2004)
J. Electron. Mater.
, vol.33
, Issue.4
, pp. 334-339
-
-
Estragnat, E.1
Tang, G.2
Liang, H.3
Jahanmir, S.4
Pei, P.5
Martin, J.M.6
-
22
-
-
25644439074
-
Influence of slurry chemistry on frictional force in copper chemical mechanical polishing
-
Akira I., Hisanori M., and Takamaro K. Influence of slurry chemistry on frictional force in copper chemical mechanical polishing. J. Electrochem. Soc. 152 9 (2005) G695-G697
-
(2005)
J. Electrochem. Soc.
, vol.152
, Issue.9
-
-
Akira, I.1
Hisanori, M.2
Takamaro, K.3
-
23
-
-
33947605713
-
Effect of chemicals on chemical mechanical polishing of glass substrates
-
Wang Y., Zhang K., Song Z., and Feng S. Effect of chemicals on chemical mechanical polishing of glass substrates. Chin. Phys. Lett. 24 1 (2007) 259-261
-
(2007)
Chin. Phys. Lett.
, vol.24
, Issue.1
, pp. 259-261
-
-
Wang, Y.1
Zhang, K.2
Song, Z.3
Feng, S.4
-
24
-
-
0346119930
-
A chemical mechanical polishing model incorporating both the chemical and mechanical effects
-
Qin K., Moudgil B., and Park C. A chemical mechanical polishing model incorporating both the chemical and mechanical effects. Thin Solid Films 446 (2004) 277-286
-
(2004)
Thin Solid Films
, vol.446
, pp. 277-286
-
-
Qin, K.1
Moudgil, B.2
Park, C.3
-
25
-
-
0035508112
-
A plasticity-based model of material removal in chemical mechanical polishing (CMP)
-
Fu G., Chandra A., Guha S., and Ubhash G. A plasticity-based model of material removal in chemical mechanical polishing (CMP). IEEE. Trans. Semiconduct. Manuf. 14 (2001) 406-417
-
(2001)
IEEE. Trans. Semiconduct. Manuf.
, vol.14
, pp. 406-417
-
-
Fu, G.1
Chandra, A.2
Guha, S.3
Ubhash, G.4
-
26
-
-
0000172773
-
A model of CMP chemical mechanical polishing
-
Paul E. A model of CMP chemical mechanical polishing. J. Electrochem. Soc. 148 6 (2001) G355-G358
-
(2001)
J. Electrochem. Soc.
, vol.148
, Issue.6
-
-
Paul, E.1
-
27
-
-
26444607825
-
Simulation on chemical mechanical polishing using atomic force microscope
-
Miyoshi A., Nakagawa H., and Matsukawa K. Simulation on chemical mechanical polishing using atomic force microscope. Microsyst. Technol. 11 (2005) 1102-1106
-
(2005)
Microsyst. Technol.
, vol.11
, pp. 1102-1106
-
-
Miyoshi, A.1
Nakagawa, H.2
Matsukawa, K.3
-
28
-
-
43549107992
-
Analyzing and modeling of material removal mechanism of single molecular layer adhering in chemical mechanical polishing process
-
(In Chinese)
-
Jiang J.Z., and Zhao Y.W. Analyzing and modeling of material removal mechanism of single molecular layer adhering in chemical mechanical polishing process. J. Harbin Inst. Technol. 38 (2006) 275-282 (In Chinese)
-
(2006)
J. Harbin Inst. Technol.
, vol.38
, pp. 275-282
-
-
Jiang, J.Z.1
Zhao, Y.W.2
-
29
-
-
0036465286
-
A micro-contact and wear model for chemical-mechanical polishing of silicon wafers
-
Zhao Y.W., and Chang L. A micro-contact and wear model for chemical-mechanical polishing of silicon wafers. Wear 252 (2002) 220-226
-
(2002)
Wear
, vol.252
, pp. 220-226
-
-
Zhao, Y.W.1
Chang, L.2
-
30
-
-
85040875608
-
-
Cambridge University Press, Cambridge
-
Johnson L. Contact Mechanics (1985), Cambridge University Press, Cambridge
-
(1985)
Contact Mechanics
-
-
Johnson, L.1
-
31
-
-
43549100042
-
-
U.D. Mahajan, Fundamental studies on silicon dioxide chemical mechanical polishing, Ph.D. Thesis, Graduated School of the University of Florida, 2000.
-
U.D. Mahajan, Fundamental studies on silicon dioxide chemical mechanical polishing, Ph.D. Thesis, Graduated School of the University of Florida, 2000.
-
-
-
-
32
-
-
0032730568
-
Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries. I. Role of alumina and potassium iodate
-
Stein D.J., Hetherington D.L., and Cecchi J.L. Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries. I. Role of alumina and potassium iodate. J. Electrochem. Soc. 146 1 (1999) 376-381
-
(1999)
J. Electrochem. Soc.
, vol.146
, Issue.1
, pp. 376-381
-
-
Stein, D.J.1
Hetherington, D.L.2
Cecchi, J.L.3
-
33
-
-
15444371653
-
Effect of process parameters on material removal rate in chemical mechanical polishing
-
Forsberg M. Effect of process parameters on material removal rate in chemical mechanical polishing. Microelectron. Eng. 77 (2005) 319-326
-
(2005)
Microelectron. Eng.
, vol.77
, pp. 319-326
-
-
Forsberg, M.1
-
34
-
-
1242287586
-
Mechanical removal in CMP of copper using alumina abrasives
-
Guo L., and Subramanian R.S. Mechanical removal in CMP of copper using alumina abrasives. J. Electrochem. Soc. 151 2 (2004) G104-G108
-
(2004)
J. Electrochem. Soc.
, vol.151
, Issue.2
-
-
Guo, L.1
Subramanian, R.S.2
-
35
-
-
25644443067
-
Modeling the effects of abrasive size distribution, adhesion, and surface plastic deformation on CMP
-
Bastaninejad M., and Ahmadi G. Modeling the effects of abrasive size distribution, adhesion, and surface plastic deformation on CMP. J. Electrochem. Soc. 152 9 (2005) G720-G730
-
(2005)
J. Electrochem. Soc.
, vol.152
, Issue.9
-
-
Bastaninejad, M.1
Ahmadi, G.2
|