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Volumn 24, Issue 3, 2004, Pages 283-287

Recent progress in study on material removal mechanisms of silicon wafer during chemical mechanical polishing

Author keywords

Chemical mechanical polishing; Chemical mechanical synergistic effect; Material removal mechanisms; Silicon wafer

Indexed keywords

CHEMISTRY; EFFECTS; EFFICIENCY; MECHANICS; SILICON WAFERS;

EID: 4744346695     PISSN: 10040595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (16)

References (51)
  • 2
    • 4744350413 scopus 로고    scopus 로고
    • Progress, application, and problem for chemical mechanical polishing
    • Lei H, Luo J B, Ma J J. Progress, application, and problem for chemical mechanical polishing [J]. Lubrication and Sealing, 2002, (4): 73-76.
    • (2002) Lubrication and Sealing , Issue.4 , pp. 73-76
    • Lei, H.1    Luo, J.B.2    Ma, J.J.3
  • 3
    • 0028465918 scopus 로고
    • Feature-scale fluid-based erosion modeling for chemical mechanical polishing
    • Runnels S R. Feature-scale fluid-based erosion modeling for chemical mechanical polishing [J]. Journal of Electrochemical Society, 1994, 141(7): 1900-1904.
    • (1994) Journal of Electrochemical Society , vol.141 , Issue.7 , pp. 1900-1904
    • Runnels, S.R.1
  • 4
    • 0028444787 scopus 로고
    • Tribology analysis of chemical mechanical polishing
    • Runnels S R, Eyman L M. Tribology analysis of chemical mechanical polishing [J]. Journal of Electrochemical Society, 1994, 141(6): 1698-1701.
    • (1994) Journal of Electrochemical Society , vol.141 , Issue.6 , pp. 1698-1701
    • Runnels, S.R.1    Eyman, L.M.2
  • 5
    • 0033391209 scopus 로고    scopus 로고
    • Probable role of abrasion in chemical mechanical polishing tungsten
    • Larsen-Basse J, Liang H. Probable role of abrasion in chemical mechanical polishing tungsten [J]. Wear, 1999, 233-235: 647-654.
    • (1999) Wear , vol.233-235 , pp. 647-654
    • Larsen-Basse, J.1    Liang, H.2
  • 8
    • 0032139417 scopus 로고    scopus 로고
    • Modeling of chemical mechanical polishing with soft pads
    • Shi F G, Zhao B. Modeling of chemical mechanical polishing with soft pads [J]. Applied Physics A, 1998, 67: 249-252.
    • (1998) Applied Physics A , vol.67 , pp. 249-252
    • Shi, F.G.1    Zhao, B.2
  • 9
    • 0003152418 scopus 로고    scopus 로고
    • A model for mechanical wear and abrasive particle adhesion during the chemical mechanical polishing process
    • Ahmadi G, Xia X. A model for mechanical wear and abrasive particle adhesion during the chemical mechanical polishing process [J]. Journal of Electrochemical Society, 2001, 148(3): 99-109.
    • (2001) Journal of Electrochemical Society , vol.148 , Issue.3 , pp. 99-109
    • Ahmadi, G.1    Xia, X.2
  • 10
    • 0036465286 scopus 로고    scopus 로고
    • A microcontact and wear model for chemical mechanical polishing of silicon wafer
    • Zhao Y W, Chang L. A microcontact and wear model for chemical mechanical polishing of silicon wafer [J]. Wear, 2002, 252: 220-226.
    • (2002) Wear , vol.252 , pp. 220-226
    • Zhao, Y.W.1    Chang, L.2
  • 11
    • 0035338991 scopus 로고    scopus 로고
    • Material removal mechanism in chemical mechanical polishing: Theory and modeling
    • Luo J F, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: theory and modeling [J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(2): 112-133.
    • (2001) IEEE Transactions on Semiconductor Manufacturing , vol.14 , Issue.2 , pp. 112-133
    • Luo, J.F.1    Dornfeld, D.A.2
  • 12
    • 0035508112 scopus 로고    scopus 로고
    • A plasticity-based model of material removal in chemical mechanical polishing
    • Gu G H, Chandra A, Guha S, et al. A plasticity-based model of material removal in chemical mechanical polishing [J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(4): 406-416.
    • (2001) IEEE Transactions on Semiconductor Manufacturing , vol.14 , Issue.4 , pp. 406-416
    • Gu, G.H.1    Chandra, A.2    Guha, S.3
  • 13
    • 0032674817 scopus 로고    scopus 로고
    • Effect of particle size during tungsten chemical mechanical polishing
    • Bielmann M. Effect of particle size during tungsten chemical mechanical polishing [J]. Electrochemical and Solid-State Letters, 1999, 2(8): 401-403.
    • (1999) Electrochemical and Solid-State Letters , vol.2 , Issue.8 , pp. 401-403
    • Bielmann, M.1
  • 14
    • 0032595532 scopus 로고    scopus 로고
    • Atomic force microscopy, lateral force microscopy and transmission electron microscopy investigations and adhesion force measurements for elucidation of tungsten removal mechanisms
    • Stein D J, Cecchi J L. Atomic force microscopy, lateral force microscopy and transmission electron microscopy investigations and adhesion force measurements for elucidation of tungsten removal mechanisms [J]. Journal of Materials Research, 1999, 14(9): 3695-3706.
    • (1999) Journal of Materials Research , vol.14 , Issue.9 , pp. 3695-3706
    • Stein, D.J.1    Cecchi, J.L.2
  • 15
    • 0037307324 scopus 로고    scopus 로고
    • A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species
    • Zhao Y W, Chang L, Kim S H. A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species [J]. Wear, 2003, 254: 332-339.
    • (2003) Wear , vol.254 , pp. 332-339
    • Zhao, Y.W.1    Chang, L.2    Kim, S.H.3
  • 16
    • 0025417082 scopus 로고
    • Chemical processes in glass polishing
    • Lee M C. Chemical processes in glass polishing [J]. Journal of Non-crystalline Solids, 1990, 120: 152-171.
    • (1990) Journal of Non-crystalline Solids , vol.120 , pp. 152-171
    • Lee, M.C.1
  • 17
    • 0031173556 scopus 로고    scopus 로고
    • Oxide CMP mechanisms
    • Tomozawa M. Oxide CMP mechanisms [J]. Solid State Technology, 1997, 7: 169-175.
    • (1997) Solid State Technology , vol.7 , pp. 169-175
    • Tomozawa, M.1
  • 19
    • 0026260129 scopus 로고
    • Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects
    • Kaufman F B, Thompson D B, Broadie R E, et al. Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects [J]. Journal of Electrochemical Society, 1991, 138(11): 3460-3464.
    • (1991) Journal of Electrochemical Society , vol.138 , Issue.11 , pp. 3460-3464
    • Kaufman, F.B.1    Thompson, D.B.2    Broadie, R.E.3
  • 20
    • 0030421764 scopus 로고    scopus 로고
    • Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing
    • Kneer E A, Raghunath C, Raghavan S. Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing [J]. Journal of Electrochemical Society, 1996, 143(12): 4095-4100.
    • (1996) Journal of Electrochemical Society , vol.143 , Issue.12 , pp. 4095-4100
    • Kneer, E.A.1    Raghunath, C.2    Raghavan, S.3
  • 21
    • 0033746658 scopus 로고    scopus 로고
    • Tribological experimental applied to tungsten chemical mechanical polishing
    • Bielmann M, Mahajan U, Singh R K, et al. Tribological experimental applied to tungsten chemical mechanical polishing [C]. Mat Res Soc Symp Proc, 2000, 566: 97-101.
    • (2000) Mat Res Soc Symp Proc , vol.566 , pp. 97-101
    • Bielmann, M.1    Mahajan, U.2    Singh, R.K.3
  • 23
    • 4744354933 scopus 로고    scopus 로고
    • An electrochemical approach to slurry characterization and development for W CMP
    • Streinz C C, Ligocki D, Myers T, et al. An electrochemical approach to slurry characterization and development for W CMP [C]. Electrochemical Society Proceedings, 96-22: 159-163.
    • Electrochemical Society Proceedings , pp. 159-163
    • Streinz, C.C.1    Ligocki, D.2    Myers, T.3
  • 24
    • 0039088073 scopus 로고    scopus 로고
    • A perspective on the wear mechanism during chemical mechanical polishing of tungsten thin films
    • ISMIC-1OOP/96
    • Liu C, Dai B, Tseng W, et al. A perspective on the wear mechanism during chemical mechanical polishing of tungsten thin films [C]. 1996 CMP-MIC Conference, 1996 ISMIC-1OOP/96: 138-144.
    • (1996) 1996 CMP-MIC Conference , pp. 138-144
    • Liu, C.1    Dai, B.2    Tseng, W.3
  • 25
    • 0031233624 scopus 로고    scopus 로고
    • Electrochemical measurements during the chemical mechanical polishing of tungsten thin film
    • Kneer E A, Raghunath C, Mathew V, et al. Electrochemical measurements during the chemical mechanical polishing of tungsten thin film [J]. Journal of Electrochemical Society, 1997, 144(9): 3041-3049.
    • (1997) Journal of Electrochemical Society , vol.144 , Issue.9 , pp. 3041-3049
    • Kneer, E.A.1    Raghunath, C.2    Mathew, V.3
  • 26
    • 0032167273 scopus 로고    scopus 로고
    • In situ electrochemical investigation of tungsten electrochemical behavior during chemical mechanical polishing
    • Stein D J, Hetherington D, Guilinger T, et al. In situ electrochemical investigation of tungsten electrochemical behavior during chemical mechanical polishing [J]. Journal of Electrochemical Society, 1998, 145(9): 3190-3196.
    • (1998) Journal of Electrochemical Society , vol.145 , Issue.9 , pp. 3190-3196
    • Stein, D.J.1    Hetherington, D.2    Guilinger, T.3
  • 27
    • 4744351895 scopus 로고    scopus 로고
    • On discrepancies between in-situ electrochemical measurements and actual removal rates in tungsten CMP
    • Tamboli D, Desai V, Seal S, et al. On discrepancies between in-situ electrochemical measurements and actual removal rates in tungsten CMP [C]. Electrochemical Society Proceedings, 99-37: 333-341.
    • Electrochemical Society Proceedings , pp. 333-341
    • Tamboli, D.1    Desai, V.2    Seal, S.3
  • 28
    • 0032730568 scopus 로고    scopus 로고
    • Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries. I: Role of alumina and potassium iodate
    • Stein D J, Hetherington D, Cecchi J L. Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries, I. Role of alumina and potassium iodate [J]. Journal of Electrochemical Society, 1999, 146(1): 376-381.
    • (1999) Journal of Electrochemical Society , vol.146 , Issue.1 , pp. 376-381
    • Stein, D.J.1    Hetherington, D.2    Cecchi, J.L.3
  • 29
    • 0032688973 scopus 로고    scopus 로고
    • Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries. II: Role of colloid and slurry chemistry
    • Stein D J, Hetherington D, Cecchi J L. Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries, II. Role of colloid and slurry chemistry [J]. Journal of Electrochemical Society, 1999, 146(5): 1934-1938.
    • (1999) Journal of Electrochemical Society , vol.146 , Issue.5 , pp. 1934-1938
    • Stein, D.J.1    Hetherington, D.2    Cecchi, J.L.3
  • 30
    • 0000172773 scopus 로고    scopus 로고
    • A model of chemical mechanical polishing
    • Paul E. A model of chemical mechanical polishing [J]. Journal of Electrochemical Society, 2001, 148(6): 355-358.
    • (2001) Journal of Electrochemical Society , vol.148 , Issue.6 , pp. 355-358
    • Paul, E.1
  • 31
    • 0001679117 scopus 로고    scopus 로고
    • Application of a CMP model to tungsten CMP
    • Paul E. Application of a CMP model to tungsten CMP [J]. Journal of Electrochemical Society, 2001, 148(6): 359-363.
    • (2001) Journal of Electrochemical Society , vol.148 , Issue.6 , pp. 359-363
    • Paul, E.1
  • 32
    • 0032098513 scopus 로고    scopus 로고
    • An investigation of slurry chemistry used in chemical mechanical planarization of aluminum
    • Kallingal C G, Duquette D J, Murarka S P. An investigation of slurry chemistry used in chemical mechanical planarization of aluminum [J]. Journal of Electrochemical Society, 1998, 145(6): 2074-2081.
    • (1998) Journal of Electrochemical Society , vol.145 , Issue.6 , pp. 2074-2081
    • Kallingal, C.G.1    Duquette, D.J.2    Murarka, S.P.3
  • 33
    • 0032663008 scopus 로고    scopus 로고
    • Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films
    • Wrschka P, Hernandez J, Hsu Y, et al. Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films [J]. Journal of Electrochemical Society, 1999, 146(7): 2689-2696.
    • (1999) Journal of Electrochemical Society , vol.146 , Issue.7 , pp. 2689-2696
    • Wrschka, P.1    Hernandez, J.2    Hsu, Y.3
  • 34
    • 4744342803 scopus 로고    scopus 로고
    • Electrochemical investigations during the abrasion of aluminum thin films in an iodate based alumina slurry
    • Fang Y, Raghavan S, Sabde G, et al. Electrochemical investigations during the abrasion of aluminum thin films in an iodate based alumina slurry [C]. Electrochemical Society Proceedings, 99-37: 301-310.
    • Electrochemical Society Proceedings , pp. 301-310
    • Fang, Y.1    Raghavan, S.2    Sabde, G.3
  • 35
    • 0034503515 scopus 로고    scopus 로고
    • Abrasion and dissolution interaction of Al in a phosphoric acid solution
    • Tsai W T, Huang T M. Abrasion and dissolution interaction of Al in a phosphoric acid solution [J]. Thin Solid Films, 2000, 379:107-113.
    • (2000) Thin Solid Films , vol.379 , pp. 107-113
    • Tsai, W.T.1    Huang, T.M.2
  • 36
    • 0034205661 scopus 로고    scopus 로고
    • Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
    • Kuo H S, Tsai W T. Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry [J]. Journal of Electrochemical Society, 2000, 147(6): 2136-2142.
    • (2000) Journal of Electrochemical Society , vol.147 , Issue.6 , pp. 2136-2142
    • Kuo, H.S.1    Tsai, W.T.2
  • 37
    • 0033881916 scopus 로고    scopus 로고
    • Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry
    • Kuo H S, Tsai W T. Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry [J]. Journal of Electrochemical Society, 2000, 147(1): 149-154.
    • (2000) Journal of Electrochemical Society , vol.147 , Issue.1 , pp. 149-154
    • Kuo, H.S.1    Tsai, W.T.2
  • 38
    • 0035281722 scopus 로고    scopus 로고
    • Effects of alumina and hydrogen peroxide on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
    • Kuo H S, Tsai W T. Effects of alumina and hydrogen peroxide on the chemical mechanical polishing of aluminum in phosphoric acid base slurry [J]. Journal of Electrochemical Society, 2001, 69: 53-61.
    • (2001) Journal of Electrochemical Society , vol.69 , pp. 53-61
    • Kuo, H.S.1    Tsai, W.T.2
  • 39
    • 0034433714 scopus 로고    scopus 로고
    • Fundamental study of iodate and iodine based slurries for copper CMP
    • Lee S M, Mahajan U, Chen Z, et al. Fundamental study of iodate and iodine based slurries for copper CMP [C]. Mat Res Soc Symp Proc, 2000, 613: E7.8.1-E7.8.7.
    • (2000) Mat Res Soc Symp Proc , vol.613
    • Lee, S.M.1    Mahajan, U.2    Chen, Z.3
  • 42
    • 0035558858 scopus 로고    scopus 로고
    • Copper CMP for dual damascene technology: Some consideration on the mechanism of Cu removal
    • Wei D, Gotkis, Li H, et al. Copper CMP for dual damascene technology: some consideration on the mechanism of Cu removal [C]. Mat Res Soc Symp Proc, 2001, 671: M3.3.1-M3.3.7.
    • (2001) Mat Res Soc Symp Proc , vol.671
    • Wei, D.1    Gotkis2    Li, H.3
  • 43
    • 3042845501 scopus 로고    scopus 로고
    • Study of slurry chemistry in chemical mechanical polishing (CMP) of copper
    • Lee S M, Mahajan U, Chen Z, et al. Study of slurry chemistry in chemical mechanical polishing (CMP) of copper [C]. Electrochemical Society Proceedings, 1999, 99-37: 187-189.
    • (1999) Electrochemical Society Proceedings , pp. 187-189
    • Lee, S.M.1    Mahajan, U.2    Chen, Z.3
  • 46
    • 0033728436 scopus 로고    scopus 로고
    • Directions in the chemical mechanical planarization research
    • Murarka S P. Directions in the chemical mechanical planarization research [C]. Mat Res Soc Symp Proc, 2000, 566: 3-11.
    • (2000) Mat Res Soc Symp Proc , vol.566 , pp. 3-11
    • Murarka, S.P.1
  • 47
    • 0029343014 scopus 로고
    • Electrochemical potential measurements during the chemical mechanical polishing of copper thin films
    • Steigerwald J M, Duquette D J, Murarka S P, et al. Electrochemical potential measurements during the chemical mechanical polishing of copper thin films [J]. Journal of Electrochemical Society, 1995, 142(7): 2379-2385.
    • (1995) Journal of Electrochemical Society , vol.142 , Issue.7 , pp. 2379-2385
    • Steigerwald, J.M.1    Duquette, D.J.2    Murarka, S.P.3
  • 48
    • 0029389318 scopus 로고
    • Initial study on copper CMP slurry chemistries
    • Carpio R, Farkas J, Jairath R. Initial study on copper CMP slurry chemistries [J]. Thin Solid Films, 1995, 226: 238-244.
    • (1995) Thin Solid Films , vol.226 , pp. 238-244
    • Carpio, R.1    Farkas, J.2    Jairath, R.3
  • 49
    • 0031367264 scopus 로고    scopus 로고
    • Chemical mechanical polishing of copper in alkaline media
    • Luo Q, Campbell D R, Babu S V. Chemical mechanical polishing of copper in alkaline media [J]. Thin Solid Films, 1997, 311: 77-182.
    • (1997) Thin Solid Films , vol.311 , pp. 77-182
    • Luo, Q.1    Campbell, D.R.2    Babu, S.V.3
  • 50
    • 0033738241 scopus 로고    scopus 로고
    • An exploration of the copper CMP removal mechanism
    • Renteln P, Ninh T. An exploration of the copper CMP removal mechanism [C]. Mat Res Soc Symp Proc, 2000, 566: 155-160.
    • (2000) Mat Res Soc Symp Proc , vol.566 , pp. 155-160
    • Renteln, P.1    Ninh, T.2
  • 51
    • 4744345756 scopus 로고    scopus 로고
    • Molecular dynamics simulation on nano-indentation of self-assembled monolayers
    • Lan H Q, Zhang S W, Wang D G. Molecular dynamics simulation on nano-indentation of self-assembled monolayers [J]. Tribology, 2002, 22(5): 402-404.
    • (2002) Tribology , vol.22 , Issue.5 , pp. 402-404
    • Lan, H.Q.1    Zhang, S.W.2    Wang, D.G.3


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