-
2
-
-
4744350413
-
Progress, application, and problem for chemical mechanical polishing
-
Lei H, Luo J B, Ma J J. Progress, application, and problem for chemical mechanical polishing [J]. Lubrication and Sealing, 2002, (4): 73-76.
-
(2002)
Lubrication and Sealing
, Issue.4
, pp. 73-76
-
-
Lei, H.1
Luo, J.B.2
Ma, J.J.3
-
3
-
-
0028465918
-
Feature-scale fluid-based erosion modeling for chemical mechanical polishing
-
Runnels S R. Feature-scale fluid-based erosion modeling for chemical mechanical polishing [J]. Journal of Electrochemical Society, 1994, 141(7): 1900-1904.
-
(1994)
Journal of Electrochemical Society
, vol.141
, Issue.7
, pp. 1900-1904
-
-
Runnels, S.R.1
-
4
-
-
0028444787
-
Tribology analysis of chemical mechanical polishing
-
Runnels S R, Eyman L M. Tribology analysis of chemical mechanical polishing [J]. Journal of Electrochemical Society, 1994, 141(6): 1698-1701.
-
(1994)
Journal of Electrochemical Society
, vol.141
, Issue.6
, pp. 1698-1701
-
-
Runnels, S.R.1
Eyman, L.M.2
-
5
-
-
0033391209
-
Probable role of abrasion in chemical mechanical polishing tungsten
-
Larsen-Basse J, Liang H. Probable role of abrasion in chemical mechanical polishing tungsten [J]. Wear, 1999, 233-235: 647-654.
-
(1999)
Wear
, vol.233-235
, pp. 647-654
-
-
Larsen-Basse, J.1
Liang, H.2
-
8
-
-
0032139417
-
Modeling of chemical mechanical polishing with soft pads
-
Shi F G, Zhao B. Modeling of chemical mechanical polishing with soft pads [J]. Applied Physics A, 1998, 67: 249-252.
-
(1998)
Applied Physics A
, vol.67
, pp. 249-252
-
-
Shi, F.G.1
Zhao, B.2
-
9
-
-
0003152418
-
A model for mechanical wear and abrasive particle adhesion during the chemical mechanical polishing process
-
Ahmadi G, Xia X. A model for mechanical wear and abrasive particle adhesion during the chemical mechanical polishing process [J]. Journal of Electrochemical Society, 2001, 148(3): 99-109.
-
(2001)
Journal of Electrochemical Society
, vol.148
, Issue.3
, pp. 99-109
-
-
Ahmadi, G.1
Xia, X.2
-
10
-
-
0036465286
-
A microcontact and wear model for chemical mechanical polishing of silicon wafer
-
Zhao Y W, Chang L. A microcontact and wear model for chemical mechanical polishing of silicon wafer [J]. Wear, 2002, 252: 220-226.
-
(2002)
Wear
, vol.252
, pp. 220-226
-
-
Zhao, Y.W.1
Chang, L.2
-
11
-
-
0035338991
-
Material removal mechanism in chemical mechanical polishing: Theory and modeling
-
Luo J F, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: theory and modeling [J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(2): 112-133.
-
(2001)
IEEE Transactions on Semiconductor Manufacturing
, vol.14
, Issue.2
, pp. 112-133
-
-
Luo, J.F.1
Dornfeld, D.A.2
-
12
-
-
0035508112
-
A plasticity-based model of material removal in chemical mechanical polishing
-
Gu G H, Chandra A, Guha S, et al. A plasticity-based model of material removal in chemical mechanical polishing [J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(4): 406-416.
-
(2001)
IEEE Transactions on Semiconductor Manufacturing
, vol.14
, Issue.4
, pp. 406-416
-
-
Gu, G.H.1
Chandra, A.2
Guha, S.3
-
13
-
-
0032674817
-
Effect of particle size during tungsten chemical mechanical polishing
-
Bielmann M. Effect of particle size during tungsten chemical mechanical polishing [J]. Electrochemical and Solid-State Letters, 1999, 2(8): 401-403.
-
(1999)
Electrochemical and Solid-State Letters
, vol.2
, Issue.8
, pp. 401-403
-
-
Bielmann, M.1
-
14
-
-
0032595532
-
Atomic force microscopy, lateral force microscopy and transmission electron microscopy investigations and adhesion force measurements for elucidation of tungsten removal mechanisms
-
Stein D J, Cecchi J L. Atomic force microscopy, lateral force microscopy and transmission electron microscopy investigations and adhesion force measurements for elucidation of tungsten removal mechanisms [J]. Journal of Materials Research, 1999, 14(9): 3695-3706.
-
(1999)
Journal of Materials Research
, vol.14
, Issue.9
, pp. 3695-3706
-
-
Stein, D.J.1
Cecchi, J.L.2
-
15
-
-
0037307324
-
A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species
-
Zhao Y W, Chang L, Kim S H. A mathematical model for chemical mechanical polishing based on formation and removal of weakly bonded molecular species [J]. Wear, 2003, 254: 332-339.
-
(2003)
Wear
, vol.254
, pp. 332-339
-
-
Zhao, Y.W.1
Chang, L.2
Kim, S.H.3
-
16
-
-
0025417082
-
Chemical processes in glass polishing
-
Lee M C. Chemical processes in glass polishing [J]. Journal of Non-crystalline Solids, 1990, 120: 152-171.
-
(1990)
Journal of Non-crystalline Solids
, vol.120
, pp. 152-171
-
-
Lee, M.C.1
-
17
-
-
0031173556
-
Oxide CMP mechanisms
-
Tomozawa M. Oxide CMP mechanisms [J]. Solid State Technology, 1997, 7: 169-175.
-
(1997)
Solid State Technology
, vol.7
, pp. 169-175
-
-
Tomozawa, M.1
-
19
-
-
0026260129
-
Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects
-
Kaufman F B, Thompson D B, Broadie R E, et al. Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects [J]. Journal of Electrochemical Society, 1991, 138(11): 3460-3464.
-
(1991)
Journal of Electrochemical Society
, vol.138
, Issue.11
, pp. 3460-3464
-
-
Kaufman, F.B.1
Thompson, D.B.2
Broadie, R.E.3
-
20
-
-
0030421764
-
Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing
-
Kneer E A, Raghunath C, Raghavan S. Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing [J]. Journal of Electrochemical Society, 1996, 143(12): 4095-4100.
-
(1996)
Journal of Electrochemical Society
, vol.143
, Issue.12
, pp. 4095-4100
-
-
Kneer, E.A.1
Raghunath, C.2
Raghavan, S.3
-
21
-
-
0033746658
-
Tribological experimental applied to tungsten chemical mechanical polishing
-
Bielmann M, Mahajan U, Singh R K, et al. Tribological experimental applied to tungsten chemical mechanical polishing [C]. Mat Res Soc Symp Proc, 2000, 566: 97-101.
-
(2000)
Mat Res Soc Symp Proc
, vol.566
, pp. 97-101
-
-
Bielmann, M.1
Mahajan, U.2
Singh, R.K.3
-
22
-
-
4744339700
-
Oxidation and etching of tungsten in CMP slurries
-
Farkas J, Carppio R, Rajeev R, et al. Oxidation and etching of tungsten in CMP slurries [C]. Conference Proceedings ULSIX, 1995 Materials Research Society, 1995, 25-32.
-
(1995)
Conference Proceedings ULSIX, 1995 Materials Research Society
, pp. 25-32
-
-
Farkas, J.1
Carppio, R.2
Rajeev, R.3
-
23
-
-
4744354933
-
An electrochemical approach to slurry characterization and development for W CMP
-
Streinz C C, Ligocki D, Myers T, et al. An electrochemical approach to slurry characterization and development for W CMP [C]. Electrochemical Society Proceedings, 96-22: 159-163.
-
Electrochemical Society Proceedings
, pp. 159-163
-
-
Streinz, C.C.1
Ligocki, D.2
Myers, T.3
-
24
-
-
0039088073
-
A perspective on the wear mechanism during chemical mechanical polishing of tungsten thin films
-
ISMIC-1OOP/96
-
Liu C, Dai B, Tseng W, et al. A perspective on the wear mechanism during chemical mechanical polishing of tungsten thin films [C]. 1996 CMP-MIC Conference, 1996 ISMIC-1OOP/96: 138-144.
-
(1996)
1996 CMP-MIC Conference
, pp. 138-144
-
-
Liu, C.1
Dai, B.2
Tseng, W.3
-
25
-
-
0031233624
-
Electrochemical measurements during the chemical mechanical polishing of tungsten thin film
-
Kneer E A, Raghunath C, Mathew V, et al. Electrochemical measurements during the chemical mechanical polishing of tungsten thin film [J]. Journal of Electrochemical Society, 1997, 144(9): 3041-3049.
-
(1997)
Journal of Electrochemical Society
, vol.144
, Issue.9
, pp. 3041-3049
-
-
Kneer, E.A.1
Raghunath, C.2
Mathew, V.3
-
26
-
-
0032167273
-
In situ electrochemical investigation of tungsten electrochemical behavior during chemical mechanical polishing
-
Stein D J, Hetherington D, Guilinger T, et al. In situ electrochemical investigation of tungsten electrochemical behavior during chemical mechanical polishing [J]. Journal of Electrochemical Society, 1998, 145(9): 3190-3196.
-
(1998)
Journal of Electrochemical Society
, vol.145
, Issue.9
, pp. 3190-3196
-
-
Stein, D.J.1
Hetherington, D.2
Guilinger, T.3
-
27
-
-
4744351895
-
On discrepancies between in-situ electrochemical measurements and actual removal rates in tungsten CMP
-
Tamboli D, Desai V, Seal S, et al. On discrepancies between in-situ electrochemical measurements and actual removal rates in tungsten CMP [C]. Electrochemical Society Proceedings, 99-37: 333-341.
-
Electrochemical Society Proceedings
, pp. 333-341
-
-
Tamboli, D.1
Desai, V.2
Seal, S.3
-
28
-
-
0032730568
-
Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries. I: Role of alumina and potassium iodate
-
Stein D J, Hetherington D, Cecchi J L. Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries, I. Role of alumina and potassium iodate [J]. Journal of Electrochemical Society, 1999, 146(1): 376-381.
-
(1999)
Journal of Electrochemical Society
, vol.146
, Issue.1
, pp. 376-381
-
-
Stein, D.J.1
Hetherington, D.2
Cecchi, J.L.3
-
29
-
-
0032688973
-
Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries. II: Role of colloid and slurry chemistry
-
Stein D J, Hetherington D, Cecchi J L. Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries, II. Role of colloid and slurry chemistry [J]. Journal of Electrochemical Society, 1999, 146(5): 1934-1938.
-
(1999)
Journal of Electrochemical Society
, vol.146
, Issue.5
, pp. 1934-1938
-
-
Stein, D.J.1
Hetherington, D.2
Cecchi, J.L.3
-
30
-
-
0000172773
-
A model of chemical mechanical polishing
-
Paul E. A model of chemical mechanical polishing [J]. Journal of Electrochemical Society, 2001, 148(6): 355-358.
-
(2001)
Journal of Electrochemical Society
, vol.148
, Issue.6
, pp. 355-358
-
-
Paul, E.1
-
31
-
-
0001679117
-
Application of a CMP model to tungsten CMP
-
Paul E. Application of a CMP model to tungsten CMP [J]. Journal of Electrochemical Society, 2001, 148(6): 359-363.
-
(2001)
Journal of Electrochemical Society
, vol.148
, Issue.6
, pp. 359-363
-
-
Paul, E.1
-
32
-
-
0032098513
-
An investigation of slurry chemistry used in chemical mechanical planarization of aluminum
-
Kallingal C G, Duquette D J, Murarka S P. An investigation of slurry chemistry used in chemical mechanical planarization of aluminum [J]. Journal of Electrochemical Society, 1998, 145(6): 2074-2081.
-
(1998)
Journal of Electrochemical Society
, vol.145
, Issue.6
, pp. 2074-2081
-
-
Kallingal, C.G.1
Duquette, D.J.2
Murarka, S.P.3
-
33
-
-
0032663008
-
Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films
-
Wrschka P, Hernandez J, Hsu Y, et al. Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films [J]. Journal of Electrochemical Society, 1999, 146(7): 2689-2696.
-
(1999)
Journal of Electrochemical Society
, vol.146
, Issue.7
, pp. 2689-2696
-
-
Wrschka, P.1
Hernandez, J.2
Hsu, Y.3
-
34
-
-
4744342803
-
Electrochemical investigations during the abrasion of aluminum thin films in an iodate based alumina slurry
-
Fang Y, Raghavan S, Sabde G, et al. Electrochemical investigations during the abrasion of aluminum thin films in an iodate based alumina slurry [C]. Electrochemical Society Proceedings, 99-37: 301-310.
-
Electrochemical Society Proceedings
, pp. 301-310
-
-
Fang, Y.1
Raghavan, S.2
Sabde, G.3
-
35
-
-
0034503515
-
Abrasion and dissolution interaction of Al in a phosphoric acid solution
-
Tsai W T, Huang T M. Abrasion and dissolution interaction of Al in a phosphoric acid solution [J]. Thin Solid Films, 2000, 379:107-113.
-
(2000)
Thin Solid Films
, vol.379
, pp. 107-113
-
-
Tsai, W.T.1
Huang, T.M.2
-
36
-
-
0034205661
-
Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
-
Kuo H S, Tsai W T. Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry [J]. Journal of Electrochemical Society, 2000, 147(6): 2136-2142.
-
(2000)
Journal of Electrochemical Society
, vol.147
, Issue.6
, pp. 2136-2142
-
-
Kuo, H.S.1
Tsai, W.T.2
-
37
-
-
0033881916
-
Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry
-
Kuo H S, Tsai W T. Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry [J]. Journal of Electrochemical Society, 2000, 147(1): 149-154.
-
(2000)
Journal of Electrochemical Society
, vol.147
, Issue.1
, pp. 149-154
-
-
Kuo, H.S.1
Tsai, W.T.2
-
38
-
-
0035281722
-
Effects of alumina and hydrogen peroxide on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
-
Kuo H S, Tsai W T. Effects of alumina and hydrogen peroxide on the chemical mechanical polishing of aluminum in phosphoric acid base slurry [J]. Journal of Electrochemical Society, 2001, 69: 53-61.
-
(2001)
Journal of Electrochemical Society
, vol.69
, pp. 53-61
-
-
Kuo, H.S.1
Tsai, W.T.2
-
39
-
-
0034433714
-
Fundamental study of iodate and iodine based slurries for copper CMP
-
Lee S M, Mahajan U, Chen Z, et al. Fundamental study of iodate and iodine based slurries for copper CMP [C]. Mat Res Soc Symp Proc, 2000, 613: E7.8.1-E7.8.7.
-
(2000)
Mat Res Soc Symp Proc
, vol.613
-
-
Lee, S.M.1
Mahajan, U.2
Chen, Z.3
-
42
-
-
0035558858
-
Copper CMP for dual damascene technology: Some consideration on the mechanism of Cu removal
-
Wei D, Gotkis, Li H, et al. Copper CMP for dual damascene technology: some consideration on the mechanism of Cu removal [C]. Mat Res Soc Symp Proc, 2001, 671: M3.3.1-M3.3.7.
-
(2001)
Mat Res Soc Symp Proc
, vol.671
-
-
Wei, D.1
Gotkis2
Li, H.3
-
43
-
-
3042845501
-
Study of slurry chemistry in chemical mechanical polishing (CMP) of copper
-
Lee S M, Mahajan U, Chen Z, et al. Study of slurry chemistry in chemical mechanical polishing (CMP) of copper [C]. Electrochemical Society Proceedings, 1999, 99-37: 187-189.
-
(1999)
Electrochemical Society Proceedings
, pp. 187-189
-
-
Lee, S.M.1
Mahajan, U.2
Chen, Z.3
-
44
-
-
0001258406
-
Mechanisms of copper removal during chemical mechanical polishing
-
Steigerwald J M, Murarka S P, Gutmann R J, et al. Mechanisms of copper removal during chemical mechanical polishing [J]. Journal of Vacuum Science and Technology B, 1995, 13(6): 2215-2218.
-
(1995)
Journal of Vacuum Science and Technology B
, vol.13
, Issue.6
, pp. 2215-2218
-
-
Steigerwald, J.M.1
Murarka, S.P.2
Gutmann, R.J.3
-
45
-
-
0001519648
-
Chemical process in the chemical mechanical polishing of copper
-
Steigerwald J M, Murarka S P, Gutmann R J, et al. Chemical process in the chemical mechanical polishing of copper [J]. Materials Chemistry and Physics, 1995, 41: 217-228
-
(1995)
Materials Chemistry and Physics
, vol.41
, pp. 217-228
-
-
Steigerwald, J.M.1
Murarka, S.P.2
Gutmann, R.J.3
-
46
-
-
0033728436
-
Directions in the chemical mechanical planarization research
-
Murarka S P. Directions in the chemical mechanical planarization research [C]. Mat Res Soc Symp Proc, 2000, 566: 3-11.
-
(2000)
Mat Res Soc Symp Proc
, vol.566
, pp. 3-11
-
-
Murarka, S.P.1
-
47
-
-
0029343014
-
Electrochemical potential measurements during the chemical mechanical polishing of copper thin films
-
Steigerwald J M, Duquette D J, Murarka S P, et al. Electrochemical potential measurements during the chemical mechanical polishing of copper thin films [J]. Journal of Electrochemical Society, 1995, 142(7): 2379-2385.
-
(1995)
Journal of Electrochemical Society
, vol.142
, Issue.7
, pp. 2379-2385
-
-
Steigerwald, J.M.1
Duquette, D.J.2
Murarka, S.P.3
-
48
-
-
0029389318
-
Initial study on copper CMP slurry chemistries
-
Carpio R, Farkas J, Jairath R. Initial study on copper CMP slurry chemistries [J]. Thin Solid Films, 1995, 226: 238-244.
-
(1995)
Thin Solid Films
, vol.226
, pp. 238-244
-
-
Carpio, R.1
Farkas, J.2
Jairath, R.3
-
49
-
-
0031367264
-
Chemical mechanical polishing of copper in alkaline media
-
Luo Q, Campbell D R, Babu S V. Chemical mechanical polishing of copper in alkaline media [J]. Thin Solid Films, 1997, 311: 77-182.
-
(1997)
Thin Solid Films
, vol.311
, pp. 77-182
-
-
Luo, Q.1
Campbell, D.R.2
Babu, S.V.3
-
50
-
-
0033738241
-
An exploration of the copper CMP removal mechanism
-
Renteln P, Ninh T. An exploration of the copper CMP removal mechanism [C]. Mat Res Soc Symp Proc, 2000, 566: 155-160.
-
(2000)
Mat Res Soc Symp Proc
, vol.566
, pp. 155-160
-
-
Renteln, P.1
Ninh, T.2
-
51
-
-
4744345756
-
Molecular dynamics simulation on nano-indentation of self-assembled monolayers
-
Lan H Q, Zhang S W, Wang D G. Molecular dynamics simulation on nano-indentation of self-assembled monolayers [J]. Tribology, 2002, 22(5): 402-404.
-
(2002)
Tribology
, vol.22
, Issue.5
, pp. 402-404
-
-
Lan, H.Q.1
Zhang, S.W.2
Wang, D.G.3
|