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Volumn 253, Issue 23, 2007, Pages 9137-9141

Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale

Author keywords

Atomic scale; Binding energy; Chemical mechanical polishing; Modeling

Indexed keywords

BINDING ENERGY; COMPUTER SIMULATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDATION; PARTICLE SIZE;

EID: 34548292125     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.05.043     Document Type: Article
Times cited : (24)

References (28)
  • 6
    • 34548289591 scopus 로고    scopus 로고
    • Study on material removal mechanism of wafer chemical mechanical polishing in IC manufacturing
    • (in Chinese)
    • Su J.X. Study on material removal mechanism of wafer chemical mechanical polishing in IC manufacturing. Dalian Univ. Technol. (2007) (in Chinese)
    • (2007) Dalian Univ. Technol.
    • Su, J.X.1
  • 25
    • 34548269276 scopus 로고    scopus 로고
    • Shang hai: FuDan University Press p. 102 (in Chinese)
    • Xie X.D., and Chen D. Solid Band Theory (1998), Shang hai: FuDan University Press p. 102 (in Chinese)
    • (1998) Solid Band Theory
    • Xie, X.D.1    Chen, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.