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Microelectronic Engineering

Volumn 77, Issue 3-4, 2005, Pages 319-326

Effect of process parameters on material removal rate in chemical mechanical polishing of Si(1 0 0)

(1) Forsberg, Markus a

a UPPSALA UNIVERSITY (Sweden)

Author keywords

Chemical mechanical polishing; Removal rate; Si(1 0 0)

Indexed keywords

DISSOLUTION; ELECTROCHEMISTRY; PARAMETER ESTIMATION; POLYSILICON; PROCESS CONTROL; SINGLE CRYSTALS; SLURRIES; TRANSMISSION ELECTRON MICROSCOPY;

COLLECTORS; OVERGROWTH; REMOVAL RATE; THINNING;

CHEMICAL MECHANICAL POLISHING;

EID: 15444371653 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2004.12.001 Document Type: Article

Times cited : (75)

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