Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100) Si

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3528-3533

  Corni, F ^a   Frabboni, S ^a   Tonini, R ^a   Ottaviani, G ^a   Queirolo, G ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244296439     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361404     Document Type: Article

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