Mechanisms of GaAsN growth: Surface and step-edge diffusion

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  Reason, M ^a   Rudawski, N G ^a   McKay, H A ^a   Weng, X ^a   Ye, W ^a   Goldman, R S ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTILAYER GROWTH; STEP-EDGE DIFFUSION; SURFACE MOBILITY;

ACTIVATION ENERGY; ADATOMS; ATOMIC FORCE MICROSCOPY; GROWTH TEMPERATURE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE DIFFUSION;

FILM GROWTH;

EID: 34247859171     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2719275     Document Type: Conference Paper

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