Gate-controlled charge transfer in Si:P double quantum dots

Nanotechnology

Volumn 19, Issue 19, 2008, Pages

  Hudson, F E ^a   Ferguson, A J ^a,c   Escott, C C ^a   Yang, C ^b   Jamieson, D N ^b   Clark, R G ^a   Dzurak, A S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARGE TRANSFER; GATE DIELECTRICS; ION IMPLANTATION; PHASE SEPARATION; TRANSISTORS;

CAPACITANCE MODELING; CHARGE STABILITY; SINGLE-ELECTRON TRANSISTORS; UNDOPED SILICON;

SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM; PHOSPHORUS; QUANTUM DOT; SILICON;

ACCELERATION; ARTICLE; ELECTRIC CAPACITANCE; ELECTRICITY; LOW TEMPERATURE; NANOTECHNOLOGY; PARTICLE SIZE; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 42549115354     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/19/195402     Document Type: Article

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