Coulomb blockade in a nanoscale phosphorus-in-silicon island

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1809-1813

  Hudson, F E ^a   Ferguson, A J ^a   Yang, C ^b   Jamieson, D N ^b   Dzurak, A S ^a   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

Coulomb blockade; Quantum computing; Single electron transistor

Indexed keywords

DOPING (ADDITIVES); ELECTRONS; FIELD EFFECT TRANSISTORS; OSCILLATIONS; PHOSPHORUS; QUANTUM THEORY; TRANSISTORS;

OSCILLATION PERIOD; QUANTUM COMPUTING; SINGLE ELECTRON TRANSISTOR;

COULOMB BLOCKADE;

EID: 33646017719     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.173     Document Type: Article

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