Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Applied Physics Letters

Volumn 88, Issue 5, 2006, Pages 1-3

  Fujiwara, Akira ^a   Inokawa, Hiroshi ^a   Yamazaki, Kenji ^a   Namatsu, Hideo ^a   Takahashi, Yasuo ^a,c   Zimmerman, Neil M ^b   Martin, Stuart B ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC BARRIERS; GATE CAPACITANCES; SINGLE-ELECTRON TUNNELING (SET); TUNNEL BARRIERS;

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON;

MOSFET DEVICES;

EID: 31944440585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168496     Document Type: Article

References (15)

1. For a review, see Single Charge Tunneling, edited by, H. Grabert, and, M. H. Devaret, (Plenum, New York, 1992).
2. K. K. Likharev, Proc. IEEE 87, 606 (1999).
3. Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, J. Phys.: Condens. Matter 14, R995 (2002).
4. R. J. Schoelkopf, P. Wahlgren, A. A. Kozhevnikov, P. Delsing, and D. Prober, Science 280, 1238 (1998).
5. M. W. Keller, A. L. Eichenberger, J. M. Martinis, and N. M. Zimmerman, Science 285, 1706 (1999).
6. U. Meirav and E. B. Foxman, Semicond. Sci. Technol. 10, 255 (1995).
7. H. Matsuoka, T. Ichiguchi, T. Yoshimura, and E. Takeda, Appl. Phys. Lett. 64, 586 (1994).
8. D. H. Kim, S. K. Sung, K. R. Kim, J. D. Lee, B. G. Park, B. H. Choi, S. W. Hwang, and D. Ahn, IEEE Trans. Electron Devices 49, 627 (2002).
9. H. Inokawa and Y. Takahashi, Jpn. J. Appl. Phys., Part 2 43, L1048 (2004).
10. H. Kawaura, T. Sakamoto, and T. Baba, Appl. Phys. Lett. 76, 3810 (2000).
11. F. Hofmann, T. Heinzel, D. A. Wharam, J. P. Kotthaus, G. Böhm, W. Klein, G. Tränkle, and G. Weimann, Phys. Rev. B 51, 13872 (1995).
12. A. Fujiwara and Y. Takahashi, Nature (London) 410, 560 (2001).
13. A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi, Appl. Phys. Lett. 84, 1323 (2004).
14. K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi, Electron. Lett. 40, 229 (2004).
15. See ITRS (International Technology Roadmap for Semiconductors) 2004 update at http://public.itrs.net