Gate-defined quantum dots in intrinsic silicon

Nano Letters

Volumn 7, Issue 7, 2007, Pages 2051-2055

  Angus, Susan J ^a   Ferguson, Andrew J ^a   Dzurak, Andrew S ^a   Clark, Robert G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONS; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; SILICON; TUNING;

DEPLETION GATES; TUNABLE TUNNEL BARRIERS;

SEMICONDUCTOR QUANTUM DOTS;

NANOWIRE; QUANTUM DOT; SILICON;

CHEMISTRY; NANOTECHNOLOGY; REVIEW; SEMICONDUCTOR;

NANOTECHNOLOGY; NANOWIRES; QUANTUM DOTS; SILICON; TRANSISTORS;

EID: 34547592145     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070949k     Document Type: Article

References (27)

1. Elzerman, J. M.; Hanson, R.; Willems van Beveren, L. H.; Witkamp, B.; K. Vandersypen, L. M.; Kouwenhoven, L. P. Nature 2004, 430, 431.
2. Petta, J. R.; Johnson, A. C.; Taylor, J. M.; Laird, E. A.; Yacoby, A.; Lukin, M. D.; Marcus, C. M.; Hanson, M. P.; Gossard, A. C. Science 2005, 309, 2180.
3. Koppens, F. H. L.; Buizert, C.; Tielrooij, K. J.; Vink, I. T.; Nowack, K. C.; Meunier, T.; Kouwenhoven, L. P.; Vandersypen, L. M. K. Nature 2006, 442, 766.
4. Biercuk, M. J.; Mason, N.; Marcus, C. M. Nano Lett. 2004, 4, 1.
5. Sapmaz, S.; Meyer, C.; Beliczynski, P.; Jarillo-Herrero, P.; Kouwenhoven, L. P. Nano Lett. 2006, 6, 1350.
6. Fasth, C.; Fuhrer, A.; Bjork, M. T.; Samuelson, L. Nano Lett. 2005, 5, 1487.
7. Tahan, C.; Joynt, R. Phys. Rev. B: Condens. Matter Mater. Phys. 2005, 71, 075315.
8. Klein, L. J.; Lewis, K. L. M.; Slinker, K. A.; Goswami, S.; van der Weide, D. W.; Blick, R. H.; Mooney, P. M.; Chu, J. O.; Coppersmith, S. N.; Friesen, M.; Eriksson, M. A. J. Appl. Phys. 2006, 99, 023509.
9. Berer, T.; Pachinger, D.; Pillwein, G.; Muhlberger, M.; Lichtenberger, H.; Brunthaler, G.; Schaffler, F. Appl. Phys. Lett. 2006, 88, 162112.
10. Sakr, M. R.; Jiang, H. W.; Yablonovitch, E.; Croke, E. T. Appl. Phys. Lett. 2005, 87, 223104.
11. Klein, L. J.; Savage, D. E.; Eriksson, M. A. Appl. Phys. Lett. 2007, 90, 033103.
12. Goswami, S.; Slinker, K. A.; Friesen, M.; McGuire, L. M.; Truitt, J. L.; Tahan, C.; Klein, L. J.; Chu, J. O.; Mooney, P. M.; van der Weide, D. W.; Joynt, R.; Coppersmith, S. N.; Eriksson, M. A. Nat. Phys. 2007, 3, 41.
13. Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S. Appl. Phys. Lett. 2006, 89, 143504.
14. Rokhinson, L. P.; Guo, L. J.; Chou, S. Y.; Tsui, D. C. Phys. Rev. B: Condens. Matter Mater. Phys. 2001, 63, 035321.
15. Saitoh, M.; Saito, T.; Inukai, T.; Hiramoto, T. Appl. Phys. Lett. 2001, 79, 2025.
16. Zhong, Z. H.; Fang, Y.; Lu, W.; Lieber, C. M. Nano Lett. 2005, 5, 1143.
17. Simmel, F.; Abusch-Magder, D.; Wharam, D. A.; Kastner, M. A.; Kotthaus, J. P. Phys. Rev. B: Condens. Matter Mater. Phys. 1999, 59, 10441.
18. Jones, G. M.; Hu, B. H.; Yang, C. H.; Yang, M. J.; Hajdaj, R.; Hehein, G. Appl. Phys. Lett. 2006, 89, 073106.
19. Fujiwara, A.; Inokawa, H.; Yamazaki, K.; Namatsu, H.; Takahashi, Y.; Zimmerman, N. M.; Martin, S. B. Appl. Phys. Lett. 2006, 88, 053121.
20. -3).
21. Heij, C. P. Ph.D. Thesis, Delft University of Technology, Delft, The Netherlands, 2001.
22. The test samples consisted of two aluminium electrodes, overlapping in a 1 μm. × 1 μm region, insulated according to the AlOx technique described. The voltage required to cause breakdown of the AlOx was measured for each sample. The minimum breakdown voltage measured was 2.5 V. Approximately half of the samples (11/20) had a breakdown voltage between 2.5 V and 3.5 V, and the remainder (9/20) broke down at >3.5 V. This demonstrates that the native AlOx provides sufficient insulation up to at least 2.5 V. In fact, the quantum dot devices measured have consistently sustained a 3.0 V difference across the layers without breakdown, perhaps because of their much smaller overlap area (30 nm × 50 nm).
23. Heij, C. P.; Hadley, P.; Mooij, J. E. Appl. Phys. Lett. 2001, 78, 1140.
24. Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Science 2001, 294, 1317.
25. Sohn, L. L., Kouwenhoven, L. P., Schoen, G., Eds. Mesoscopic Electron Transport; NATO ASI Series E; Kluwer Academic Publishers: Dordrecht, The Netherlands, 1997.
26. T is the threshold voltage.
27. Ando, T.; Fowler, A. B.; Stern, F. Rev. Mod. Phys. 1982, 54, 437.