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Volumn 87, Issue 22, 2005, Pages 1-3

Fabrication and characterization of electrostatic Si/SiGe quantum dots with an integrated read-out channel

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC OCCUPATION; SCHOTTKY GATES; TRANASPORT PROCESS;

EID: 27944443165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2136436     Document Type: Article
Times cited : (46)

References (9)
  • 3
    • 0033341818 scopus 로고    scopus 로고
    • 0268-1242 10.1088/0268-1242/14/12/309
    • S. Kanjanachuchai, J. M. Bonar, and H. Ahmed, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/14/12/309 14, 1065 (1999); A. Notargiacomo, L. Di Gaspare, G. Scappucci, G. Mariottini, F. Evangelisti, E. Giovine and R. Leoni, Appl. Phys. Lett. 83, 302 (2003).
    • (1999) Semicond. Sci. Technol. , vol.14 , pp. 1065
    • Kanjanachuchai, S.1    Bonar, J.M.2    Ahmed, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.