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Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 221-225

Quantum effects in ion implanted devices

Author keywords

Charge transport; Ion beam induced charge; Ion beam lithography; Quantum computation; Quantum dots

Indexed keywords

CHARGE TRANSFER; ELECTRONS; ION BEAM LITHOGRAPHY; ION IMPLANTATION; PHOTONS; QUANTUM THEORY;

EID: 33745956825     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.002     Document Type: Article
Times cited : (4)

References (15)
  • 1
    • 0032516155 scopus 로고    scopus 로고
    • Kane B.E. Nature 393 (1998) 133
    • (1998) Nature , vol.393 , pp. 133
    • Kane, B.E.1
  • 4
    • 33745950407 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors (2003) - Challenges in Process Integration, Devices and Structures (>45 nm/Through 2010) - 1. High-performance applications, page 21. Available from: .
  • 5
    • 33745942646 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors (2003) - Difficult Challenges in Process Integration, Devices and Structures (<45 nm/Beyond 2010) - 7. Dealing with atomic-level fluctuations and statistical processes, page 22. Available from: .
  • 12
    • 33745947349 scopus 로고    scopus 로고
    • V.C. Chan, D.R. McCamey, T.M. Buehler, A.J. Ferguson, D.J. Reilly, A.S. Dzurak, R.G. Clark, C. Yang, D.N. Jamieson, arXiv:cond-mat/0510373.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.