Lateral quantum dots in Si/SiGe realized by a Schottky split-gate technique

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Berer, T ^a   Pachinger, D ^a   Pillwein, G ^a   Muhlberger M ^a   Lichtenberger, H ^a   Brunthaler, G ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; HETEROJUNCTIONS; LEAKAGE CURRENTS; PALLADIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

PALLADIUM GATES; SCHOTTKY SPLIT GATE TECHNIQUE; SINGLE ELECTRON TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247222550     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S32     Document Type: Article

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