SIMON - A simulator for single-electron tunnel devices and circuits

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 16, Issue 9, 1997, Pages 937-944

  Wasshuber, Christoph ^a   Kosina, Hans ^a   Selberherr, Siegfried ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Cotunneling; Coulomb blockade; Master equation; Monte carlo technique; Random background charge; Single electron; Tunneling

Indexed keywords

CAPACITORS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON TUNNELING; GRAPHICAL USER INTERFACES; MONTE CARLO METHODS; PIECEWISE LINEAR TECHNIQUES; TUNNEL JUNCTIONS; VOLTAGE CONTROL;

COULOMB BLOCKADE; MASTER EQUATION METHOD; RANDOM BACKGROUND CHARGE; SINGLE ELECTRON TUNNEL DEVICES; SOFTWARE PACKAGE SIMON;

INTEGRATED CIRCUIT LAYOUT;

EID: 0031224423     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.658562     Document Type: Article

References (23)

1. C. J. GorterA possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths," Physica, vol. 17, pp. 777-780, Aug. 1951.
2. K. K. LikharevCorrelated discrete transfer of single electrons in ultrasmall tunnel junctions," IBM J. Res. Develop., vol. 32, pp. 144-158, Jan. 1988.
3. D. V. Averin and K. K. LikharevSingle electronics: A correlated transfer of single electrons and Cooper pairs in systems of small tunnel junctions," in Mesoscopic Phenomena in Solids, B. L. Altshuler, P. A. Lee, and R. A. Webb, Eds. Amsterdam, Oxford, New York, Tokyo: North-Holland, Elsevier Science B.V., 1991, ch. 6, pp. 173-271.
4. H. Grabert and M. H. Devoretingle Charge Tunneling. New York: Plenum, 1992.
5. J. R. TuckerComplementary digital logic based on the 'Coulomb blockade,' " J. Appl. Phys., vol. 72, pp. 4399-4413, Nov. 1992.
6. H. Fukui. Fujishima, and K. Hoh, "Simple and stable single-electron logic utilizing tunnel-junction load," Jpn. J. Appl. Phys., vol. 34, pp. 1345-1350, Feb. 1995.
7. M. G. AnconaDesign of computationally useful single-electron digital circuits," J. Appl. Phys., vol. 79, pp. 526-539, Jan. 1996.
8. J. M. Martinis. Nahum, and H. D. Jensen, "Metrological accuracy of the electron pump," Phys. Rev. Lett., vol. 72, pp. 904-907, Feb. 1994.
9. K. Yano. Ishii, T. Sano, T. Mine, F. Murai, and K. Seki, "Single-electron-memory integrated circuit for giga-to-tera bit storage," in IEEE Int. Solid-State Circuits Conf., 1996, pp. 266-267.
10. L. R. C. Fonseca. N. Korotkov, K. K. Likharev, and A. A. Odintsov, "A numerical study of the dynamics and statistics of single electron systems," J. Appl. Phys., vol. 78, pp. 3238-3251, Sept. 1995.
11. R. H. Chen. N. Korotkov, and K. K. Likharev, "Single-electron transistor logic," Appl. Phys. Lett., vol. 68, pp. 1954-1956, Apr. 1996.
12. M. Kirihara. Kuwamura, K. Taniguchi, and C. Hamaguchi, "Monte Carlo study of single-electronic devices," in Ext. Abst. Int. Conf. Solid State Devices Mater., Yokohama, Japan, 1994, pp. 328-330.
13. N. Kuwamura. Taniguchi, and C. Hamaguchi, "Simulation of single-electron logic circuits," Trans. IEICE, vol. J77-C-II, no. 5, pp. 221-228, 1994.
14. G.-L. Ingold and Y. V. NazarovCharge tunneling rates in ultrasmall junctions," in Single Charge Tunneling - Coulomb Blockade Phenomena in Nanostructures, H. Grabert and M. H. Devoret, Eds. New York and London: Plenum and NATO Scientific Affairs Division, 1992, ch. 2, pp. 21-107.
15. W. J. Stewartntroduction to the Numerical Solution of Markov Chains. Princeton, NJ: Princeton University Press, 1994.
16. G. E. JohnsonConstruction of particular random processes," Proc. IEEE, vol. 82, pp. 270-285, Feb. 1994.
17. D. V. Averin and A. A. OdintsovMacroscopic quantum tunneling of the electric charge in small tunnel junctions," Phys. Lett. A, vol. 140, pp. 251-257, Sept. 1989.
18. D. V. Averin and Y. V. NazarovVirtual electron diffusion during quantum tunneling of the electric charge," Phys. Rev. Lett., vol. 65, pp. 2446-2449, Nov. 1990.
19. A. Phillipsr. and P. J. Price, "Monte Carlo calculations on hot electron energy tails," Appl. Phys. Lett., vol. 30, pp. 528-530, May 1977.
20. J. K. Ousterhoutcl and the Tk Toolkit. Reading, MA: Addison-Wesley, 1994.
21. 0-independent single-electron systems," in Int. Workshop Computational Electron., 1995, p. 42.
22. W. Chen and H. AhmedFabrication and physics of ∼2 nm islands for single electron devices," J. Vac. Sci. Technol. B, vol. 13, pp. 2883-2887, Nov. 1995.
23. C. Wasshuber and H. KosinaA single-electron device and circuit simulator," Superlattices and Microstructures, vol. 21, no. 1, 1997.