Scaling of ion implanted Si:P single electron devices

Nanotechnology

Volumn 18, Issue 23, 2007, Pages

  Escott, C C ^a   Hudson, F E ^a   Chan, V C ^a   Petersson, K D ^a,b   Clark, R G ^a   Dzurak, A S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; ION IMPLANTATION; NANOTECHNOLOGY; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ELECTRON STRUCTURES; PHOSPHORUS IONS;

ELECTRON DEVICES;

ION; METAL; PHOSPHORUS; SILICON;

ARTICLE; COMPUTER MODEL; COMPUTER PROGRAM; DEVICE; ELECTRON; ELECTRONICS; IMPLANTATION; METHODOLOGY; PARTICLE SIZE; PRIORITY JOURNAL;

EID: 34249098045     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/23/235401     Document Type: Article

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