Donor activation and damage in Si-SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 363-368

  McCamey, D R ^a   Francis, M ^a   McCallum, J C ^a,b   Hamilton, A R ^a   Greentree, A D ^a,b   Clark, R G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; DIELECTRIC MATERIALS; ION IMPLANTATION; MOSFET DEVICES; PHOSPHORUS; RAPID THERMAL ANNEALING; THRESHOLD VOLTAGE;

SILICON IMPLANTS; THERMAL GROWTH; VOLTAGE SHIFT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 24144492717     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/007     Document Type: Article

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