Atomistic simulation of ion implantation and its application in Si technology

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 128-136

  Posselt, Matthias ^a   Schmidt, Bruno ^a   Feudal, Thomas ^b   Strecker, Norbert ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; RADIATION DAMAGE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

BINARY COLLISION APPROXIMATION (BCA); LATERAL DUPLICATION METHOD; TRAJECTORY SPLITTING ALGORITHM;

SILICON WAFERS;

EID: 0033897005     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00362-1     Document Type: Article

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