Optimization of surface morphology and electrical properties of Ti/Al/Ti-W/Au ohmic contacts to n-GaN by two-step annealing method

Semiconductor Science and Technology

Volumn 23, Issue 4, 2008, Pages

  Fernandez S ^a   Pea R ^a   Rodrigo, M T ^a   Verdu M ^a   Sanchez F J ^a   Montojo, M T ^a  

^a Laboratorio de Ensayos   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; GALLIUM NITRIDE; MULTILAYERS; OPTIMIZATION; SURFACE MORPHOLOGY; SURFACE RESISTANCE; SURFACE ROUGHNESS;

CONTACT RESISTANCES; CONTACT SURFACE MORPHOLOGIES;

OHMIC CONTACTS;

EID: 42449157112     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/4/045021     Document Type: Article

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