AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 181-184

  Boos, J B ^a   Bennett, B R ^a   Kruppa, W ^a   Park, D ^a   Mittereder, J ^a   Chang, W ^a   Turner, N H ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GEORGE WASHINGTON UNIVERSITY   (United States)

Author keywords

AlSb; HEMTs; HFETs; InAs; TiW

Indexed keywords

LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMIC STABILITY;

GATE METALIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037290298     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00192-2     Document Type: Conference Paper

References (4)

1. Boos J.B., Yang M.J., Bennett B.R., Park D., Kruppa W., Yang C.H.et al. 0.1. μ m AlSb/InAs HEMTs with InAs subchannel Electron. Lett. 34(15):1998;1525-1526.
2. Boos J.B., Bennett B.R., Kruppa W., Park D., Mittereder J., Bass R. et al. Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation. J. Vac. Sci. Technol. B. 17(3):1999;1022-1027.
3. Ancona M.G., Boos J.B., Justh E. Modeling of ultra-low-power AlSb/InAs HEMT-RITD circuits. Proc 12th Int Conf IPRM, 2000. p. 130-3.
4. Kohn E. High temperature stable metal-GaAs contacts. IEDM Proc. 1979;469-472.