Realization of improved metallization-Ti/Al/Ti/W/Au ohmic contacts to n-GaN for high temperature application

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2536-2539

  Motayed, A ^a,c   Davydov, A V ^a   Boettinger, W J ^a   Josell, D ^a   Shapiro, A J ^a   Levin, I ^a   Zheleva, T ^b   Harris, G L ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Howard University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; DETERIORATION; ELECTRIC RESISTANCE; GALLIUM NITRIDE; GOLD; HIGH TEMPERATURE EFFECTS; METALLIZING; MORPHOLOGY; THERMODYNAMIC STABILITY; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY DIFFRACTION ANALYSIS;

CONTACT RESISTANCE CONTACT RESISTANCE; DIFFUSION BARRIER; HIGH TEMPERATURE APPLICATION;

OHMIC CONTACTS;

EID: 27344439974     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461604     Document Type: Conference Paper

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