High-power-density 0.25 μm gate-length AlGaN/GaN high-electron-mobility transistors on semi-insulating 6H-SiC substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 13-17

  Lee, J W ^a   Kumar, V ^b   Adesida, I ^b  

^a Kyung Hee University   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

GaN HEMT; Pulsed measurements; RF dispersion; SiC, microwave power FETs

Indexed keywords

ELECTRIC POTENTIAL; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

GAN HEMT; PULSED MEASUREMENTS; RF DISPERSION; SIC, MICROWAVE POWER FETS;

TRANSISTORS;

EID: 31544479077     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.13     Document Type: Article

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