Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 3996-3998

  Nishizono, K ^a   Okada, M ^a   Kamei, M ^a   Kikuta, D ^a   Tominaga, K ^a   Ohno, Y ^a   Ao, J P ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DRY ETCHING; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; EVAPORATION; MAGNETRON SPUTTERING; OHMIC CONTACTS; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE TREATMENT; ZINC OXIDE;

CARRIER DRIFT MOBILITY; CIRCULAR TRANSMISSION LINE MODEL (C-TLM); ELECTRON AFFINITY; THERMAL ANNEALING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2942525967     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738175     Document Type: Article

References (14)

1. A. Ozgur, W. Kim, and H. Morkoc, Electron. Lett. 31, 1389 (1995).
2. M. A. Khan, Q. Chen, and L. F. Eastman, IEEE Electron Device Lett. 17, 584 (1996).
3. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Yang, Appl. Phys. Lett. 70, 57 (1997).
4. M. E. Lin, Z. Ma, F. Y. Haung, Z. F. Fan, L. H. Allen, and H. Morkoc, Appl. Phys. Lett. 64, 1003 (1994).
5. M. W. Cole, D. W. Eckart, W. Y. Han, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R. A. Stall, S. J. Pearton, Y. Li, and Y. Lu, J. Appl. Phys. 80, 278 (1996).
6. S. Murai, H. Masuda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 80, 2934 (2002).
7. Y. J. Lin, C. J. Lee, and C. T. Lee, J. Appl. Phys. 93, 5321 (2003).
8. J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi, and C. T. Lee, Appl. Phys. Lett. 68, 235 (1996).
9. J. K. Kim, J.-L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
10. T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo, Appl. Phys. Lett. 76, 121 (2000).
11. S. Bethke, H. Pan, and B. W. Wessels, Appl. Phys. Lett. 52, 138 (1988).
12. S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, and L. A. Boatner, J. Appl. Phys. 93, 1 (2003).
13. B. J. Coppa, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 82, 400 (2003).
14. Q. Z. Liu and S. S. Lau, Solid-State Electron. 42, 677 (1998).