Thermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n-GaN

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4283-4289

  Pelto, Christopher M ^a   Chang, Y Austin ^a   Chen, Yong ^b   Williams, R Stanley ^b  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ATMOSPHERE; BI-LAYER; CONTACT STRUCTURE; ELECTRICAL PERFORMANCE; LAYER THICKNESS RATIO; OXIDATION RESISTANT; REOPTIMIZATION; SPECIFIC CONTACT RESISTANCES; THERMALLY STABLE; TI/AL/NI/AU; ULTRAHIGH PURITY;

ANNEALING; CONTACT RESISTANCE; ELECTRIC CONTACTORS; GALLIUM NITRIDE; OHMIC CONTACTS; OXYGEN; STRUCTURAL OPTIMIZATION; THERMAL AGING; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS;

TITANIUM ALLOYS;

EID: 18744407843     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507809     Document Type: Article

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