Ohmic contact formation of Ti/Al/Ni/Au to n-GaN by two-step annealing method

Materials Science and Engineering: B

Volumn 111, Issue 1, 2004, Pages 36-39

  Chen, Z Z ^a   Qin, Z X ^a   Hu, C Y ^a   Hu, X D ^a   Yu, T J ^a   Tong, Y Z ^a   Ding, X M ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Current voltage (I V) characteristics; N GaN; Ohmic contact; Transmission line method (TLM); Two step annealing method

Indexed keywords

ALUMINUM; ANNEALING; CLADDING (COATING); CURRENT VOLTAGE CHARACTERISTICS; GOLD; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL; OHMIC CONTACTS; REACTIVE ION ETCHING; TITANIUM;

ANNEALING TEMPERATURE; TRANSMISSION LINE METHOD (TLM); TWO-STEP ANNEALING METHOD; ZEISS MICROSCOPE;

GALLIUM NITRIDE;

EID: 2942715415     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.03.014     Document Type: Article

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