The influence of post-growth annealing on optical and electrical properties of p-type ZnO films

Materials Science in Semiconductor Processing

Volumn 10, Issue 4-5, 2007, Pages 215-221

  Zhang, C Y ^a  

^a SHANGHAI INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Cathodoluminescence; p Type ZnO films; Rapid thermal processing

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; OXYGEN VACANCIES; RAPID THERMAL PROCESSING; ZINC OXIDE;

POST-GROWTH ANNEALING; ZNO FILMS;

THIN FILMS;

EID: 40849099801     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.01.001     Document Type: Article

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