Effects of annealing atmosphere and temperature on acceptor activation in ZnSe : N grown by photoassisted MOVPE

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 312-316

  Ogata, Ken Ichi ^a   Kawaguchi, Daisuke ^a   Kera, Takashi ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHEMICAL ACTIVATION; DEHYDROGENATION; EPITAXIAL GROWTH; HYDROGENATION; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PASSIVATION; THERMAL EFFECTS;

ACCEPTOR ACTIVATION; ANNEALING ATMOSPHERE; ANNEALING TEMPERATURE; NET ACCEPTOR CONCENTRATION; NITROGEN ACCEPTORS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562384     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00766-0     Document Type: Article

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