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Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 312-315

Effects of thermal annealing of ZnO layers grown by MBE

(5) Ogata, K a Sakurai, K a Fujita, Sz a Fujita, Sg a Matsushige, K a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; EVAPORATION; LOW TEMPERATURE DRYING; MOLECULAR BEAM EPITAXY; NITROGEN; OXYGEN; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CRYSTALLINITY; DONOR LEVELS; ELECTRON CARRIER DENSITY; REEVAPORATION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033721738 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00099-3 Document Type: Article

Times cited : (148)

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