The grain-boundary-related optical and electrical properties in polycrystalline p-type ZnO films

Chemical Physics Letters

Volumn 420, Issue 4-6, 2006, Pages 448-452

  Zhang, C Y ^a   Li, X M ^a   Gao, X D ^a   Zhao, J L ^a   Wan, K S ^b   Bian, J M ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN BOUNDARIES; GREEN'S FUNCTION; OPTICAL PROPERTIES; SPECTRUM ANALYSIS; THIN FILMS; ZINC OXIDE;

ELECTRON DEPLETION; GRAIN BOUNDARY EFFECT; GREEN EMISSION; SPECTRAL ANALYSES;

POLYCRYSTALLINE MATERIALS;

EID: 33644695895     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2006.01.019     Document Type: Article

References (27)

1. S.B. Zhang, S.H. Wei, and A. Zunger Phys. Rev. B 63 2001 075205
2. C.C. Lin, S.Y. Chen, S.Y. Cheng, and H.Y. Lee Appl. Phys. Lett. 84 2004 5040
3. S.H. Wei Comp. Mater. Sci. 30 2004 337
4. Y.R. Ryu, T.S. Lee, and H.W. White Appl. Phys. Lett. 83 2003 87
5. J.F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing Appl. Phys. Lett. 83 2003 287
6. P. Nunes, E. Fortunato, P. Tonello, F. Braz Fernandes, P. Vilarinho, and R. Martins Vacuum 64 2002 281
7. S. Choopun, R.D. Vispute, W. Noch, A. Balsamo, R.P. Sharma, T. Venkatesan, A. Iliadis, and D.C. Look Appl. Phys. Lett. 75 1999 3947
8. J. Wang, G. Du, B. Zhao, X. Yang, Y. Zhang, Y. Ma, D. Liu, Y. Chang, H. Wang, H. Yang, and S. Yang J. Cryst. Growth 225 2003 293
9. S.J. Pearton, C.B. Abemathy, M.E. Overberg, G.T. Thaler, D.P. Norton, N. Theodoropulou, A.F. Hebrard, Y.D. Park, J. Kim, and L.A. Boatner J. Appl. Phys. 93 2003 1
10. K. Iwata, P. Fons, A. Yamada, K. Matsubara, and S. Niki J. Cryst. Growth 209 2000 526
11. Y.R. Ryu, T.S. Lee, and H.W. White Appl. Phys. Lett. 83 2003 1
12. T. Yamamoto, and H. Katayama-Yoshida Physica B 302/303 2001 155
13. J. Lu, Y. Zhang, Z. Ye, L. Wang, B. Zhao, and J. Huang Mater. Lett. 57 2003 3311
14. C. Wang, Z. Ji, K. Liu, Y. Xiang, and Z. Ye J. Cryst. Growth 259 2003 279
15. J.M. Bian, X.M. Li, C.Y. Zhang, W.D. Yu, and X.D. Gao Appl. Phys. Lett. 85 2004 4070
16. C.Y. Zhang, X.M. Li, J.M. Bian, W.D. Yu, and X.D. Gao Solid State Commun. 132 2004 75
17. K. Kanaya, and S. Okayama J. Phys. D 5 1972 43
18. K. Fleischer, M. Toth, M.R. Phillips, J. Zou, G. Li, and S.J. Chua Appl. Phys. Lett. 74 1999 1114
19. P.L. Washington, H.C. Ong, J.Y. Dai, and R.P.H. Chang Appl. Phys. Lett. 72 1998 3261
20. X.L. Wu, G.G. Siu, C.L. Fu, and H.C. Ong Appl. Phys. Lett. 78 2001 2285
21. H.J. Egehaaf, and D. OelKrug J. Cryst. Growth. 161 1996 190
22. B.X. Lin, Z.X. Fu, and Y.B. Jia Appl. Phys. Lett. 79 2001 943
23. W.S. Shi, O. Agyeman, and C.N. Xu J. Appl. Phys. 91 2002 5640
24. K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, and B.E. Gnade J. Appl. Phys. 79 1996 7983
25. J.M. Carlsson, H.S. Domingos, P.D. Bristowe, and B. Hellsing Phys. Rev. Lett. 91 2003 165506-1
26. D.C. Look, and B. Claflin Phys. Stat. Sol. B 3 2004 624
27. A. Urbieta, P. Fernàndez, J. Piqueras, E. Vasco, and C. Zaldo J. Optoelectr. Adv. Mater. 6 2004 183