Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications

Applied Surface Science

Volumn 254, Issue 12, 2008, Pages 3653-3666

  Hasegawa, Hideki ^a   Akazawa, Masamichi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AlGaN; Chemical sensors; GaN; Group III nitrides; Schottky diodes

Indexed keywords

CHEMICAL SENSORS; ELECTRIC CURRENTS; GALLIUM NITRIDE; TRANSPORT PROPERTIES;

ALGAN SCHOTTKY DIODES; CHEMICAL SENSOR CHIPS;

SCHOTTKY BARRIER DIODES;

EID: 40849097738     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.10.101     Document Type: Article

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