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Volumn 56, Issue 1, 1999, Pages 164-168

High temperature Pt Schottky diode gas sensors on n-type GaN

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE OPERATIONS; HYDROGEN; LEAK DETECTION; PLATINUM; PROPANE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; THERMODYNAMIC STABILITY;

EID: 0032632726     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00174-4     Document Type: Article
Times cited : (194)

References (20)
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    • Steele M.C., Maclver B.A. Palladium/cadmium sulfide Schottky diodes for hydrogen detection. Appl. Phys. Lett. 28:1976;687-688.
    • (1976) Appl. Phys. Lett. , vol.28 , pp. 687-688
    • Steele, M.C.1    MacLver, B.A.2
  • 2
    • 0000179507 scopus 로고
    • Hydrogen-sensitive Schottky barrier diodes
    • Ito K. Hydrogen-sensitive Schottky barrier diodes. Surface Sci. 86:1979;345-352.
    • (1979) Surface Sci. , vol.86 , pp. 345-352
    • Ito, K.1
  • 7
    • 0027647550 scopus 로고
    • Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
    • Arbab A., Spetz A., Lundström I. Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices. Sensors and Actuators B. 15-16:1993;19-23.
    • (1993) Sensors and Actuators B , vol.1516 , pp. 19-23
    • Arbab, A.1    Spetz, A.2    Lundström, I.3
  • 8
    • 0028410044 scopus 로고
    • Evaluation of gas mixtures with high-temperature gas sensors based on silicon carbide
    • Arbab A., Spetz A., Lundström I. Evaluation of gas mixtures with high-temperature gas sensors based on silicon carbide. Sensors and Actuators B. 18-19:1994;562-565.
    • (1994) Sensors and Actuators B , vol.1819 , pp. 562-565
    • Arbab, A.1    Spetz, A.2    Lundström, I.3
  • 9
    • 0000235794 scopus 로고
    • Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures
    • Baranzanhi A., Lloyd Spetz A., Lundström I. Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures. Appl. Phys. Lett. 67:1995;3203-3205.
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3203-3205
    • Baranzanhi, A.1    Lloyd Spetz, A.2    Lundström, I.3
  • 16
    • 21544461570 scopus 로고
    • Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
    • Gotz W., Johnson N.M., Walker J., Bour D.P., Amano H., Akasaki I. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 67:1995;2666-2668.
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 2666-2668
    • Gotz, W.1    Johnson, N.M.2    Walker, J.3    Bour, D.P.4    Amano, H.5    Akasaki, I.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.