Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1972-1976

  Kokawa, Takuva ^a   Sato, Taketomo ^a   Hasegawa, Hideki ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELECTRON MOBILITY; ELECTROSTATICS; GALLIUM NITRIDE; GATES (TRANSISTOR); PH EFFECTS; REACTION KINETICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HYDROXYLS; LIQUID-PHASE SENSORS; NERNSTIAN RESPONSE;

CHEMICAL SENSORS;

EID: 33746547908     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2214701     Document Type: Article

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