Sensing dynamics and mechanism of a Pd/AlGaN/GaN Schottky diode type hydrogen sensor

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2629-2633

  Akazawa, Masamichi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSPORT; DIPOLE FORMATION; HYDROGEN SENSING CHARACTERISTICS; HYDROGEN SENSORS; INTERFACE DIPOLES; LANGMUIR ISOTHERM; NITRIDE SEMICONDUCTORS; OXYGEN REACTION; SCHOTTKY DIODES; SCHOTTKY-BARRIER HEIGHT; THERMIONIC FIELD EMISSION; TURN-OFF;

CRYSTALS; DYNAMICS; ELECTRIC CONDUCTIVITY; FIELD EMISSION; HYDROGEN; LEAKAGE (FLUID); MECHANISMS; NITRIDES; NONMETALS; OXYGEN; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SENSORS;

SCHOTTKY BARRIER DIODES;

EID: 40849114683     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674808     Document Type: Conference Paper

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