Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 268-271

  Liu, Chuan H ^a   Lin, Hsiu Shan ^a   Lin, Yu Yin ^a   Chen, M G ^a   Pan, T M ^a   Kao, C J ^a   Huang, K T ^a   Lin, S H ^a   Sheng, Y C ^a   Chang, Wen Tung ^a   Lee, J H ^a   Huang, M ^a   Hsiung, Chiung Sheng ^a   Huang Lu, S ^a   Hsu, Chen Chung ^a   Liang, Alan Y ^a   Chen, Jenkon ^a   Hsieh, W Y ^a   Yen, P W ^a   Chien, S C ^a   Loh, Y T ^a   Chang, Yih J ^a   Liou, Fu Tai ^a   more..

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDING; NITROGEN OXIDES; RAPID THERMAL ANNEALING; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; STRESS ANALYSIS; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

REMOTE PLASMA NITRIDATION (RPN);

DIELECTRIC DEVICES;

EID: 0036088459     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

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