Atomic processes of NO oxynitridation on Si(100) surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 7, 2002, Pages 753081-753085

  Kato, Koichi ^a   Nakasaki, Yasushi ^a   Uda, Tsuyoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITROUS OXIDE; SILICON DERIVATIVE;

ARTICLE; BINDING SITE; CRYSTAL STRUCTURE; DISSOCIATION; FILM; GEOMETRY; GLASS TRANSITION TEMPERATURE; MATHEMATICAL ANALYSIS; MOLECULAR DYNAMICS; OXYNITRIDATION; SURFACE PROPERTY; TEMPERATURE DEPENDENCE;

EID: 0037104374     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.075308     Document Type: Article

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