TCAD modeling of negative bias temperature instability

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 330-333

  Grasser, T ^a   Entner, R ^a   Triebl, O ^a   Enichlmair, H ^b   Minixhofer, R ^b  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

RELAXATION PROCESSES; RELIABILITY; STRESS ANALYSIS; THRESHOLD VOLTAGE;

HYDROGEN SPECIES; MODELING EFFORTS; REACTION-DIFFUSION (RD) MODELS;

TRANSISTORS;

EID: 42549097470     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282902     Document Type: Conference Paper

References (25)

1. A. Goetzberger and H. Nigh, Proc.IEEE 54, 1454 (1966).
2. D. Schroder and J. Babcock, J.Appl.Phys. 94, 1 (2003).
3. M. Alam and S. Mahapatra, Microelectr.Reliab. 45, 71 (2005).
4. S. Mahapatra et al., Microelectr.Eng. 80, 114 (2005).
5. V. Huard et al., Microelectr.Reliab. 46, 1 (2006).
6. J. Stathis and S. Zafar, Microelectr.Reliab. 46, 270 (2006).
7. A. Krishnan et al., Appl.Phys.Lett. 88, 1 (2006).
8. J. Yang et al., Appl.Phys.Lett. 88, 1 (2006).
9. S. Chakravarthi et al., in Proc. IRPS (2004), pp. 273-282.
10. H. Kufluoglu and M. Alam, IEEE Trans.Electr.Dev. 53, 1120 (2006).
11. K. Jeppson and C. Svensson, J.Appl.Phys. 48, 2004 (1977).
12. P. Lenahan and J. Conley Jr., J.Vac.Sci.Technol.B 16, 2134 (1998).
13. J. Campbell et al., Appl.Phys.Lett. 87, 1 (2005).
14. D. Varghese et al., in Proc. IEDM (2005), pp. 1-4.
15. A. Krishnan et al., in Proc. IEDM (2003), pp. 1-4.
16. R. Entner et al., in Proc. WoDiM (2006), pp. 96-97.
17. E. Montroll and H. Scher, J.Stat.Phys 9, 101 (1973).
18. H. Scher and E. Montroll, Phys.Rev.B 12, 2455 (1975).
19. J. Noolandi, Phys.Rev.B 16, 4466 (1977).
20. V. Arkhipov and A. Rudenko, Philos.Mag.B 45, 189 (1982).
21. D. Brown and N. Saks, J.Appl.Phys. 70, 3734 (1991).
22. J. Orenstein et al., Philos.Mag.B 46, 23 (1982).
23. B. Kaczer et al., in Proc. IRPS (2005), pp. 381-387.
24. A. Haggag et al., in Proc. IRPS (2001), pp. 271-279.
25. L.-A. Ragnarsson and P. Lundgren, J.Appl.Phys. 88, 938 (2000).