Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1062-1068

  Creighton, J R ^a   Breiland, W G ^a   Koleske, D D ^a   Thaler, G ^a   Crawford, M H ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A2. Metalorganic chemical vapor deposition; A2. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; A3. Pyrometry; B1. Gallium nitride; B1. Indium gallium nitride; B1. Indium nitride

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PYROMETRY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; WAVELENGTH;

THERMAL EMISSION;

PYROMETERS;

EID: 39749195416     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.063     Document Type: Article

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