Fundamental chemistry and modeling of group-III nitride MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 2-7

  Randall Creighton, J ^a   Wang, George T ^a   Coltrin, Michael E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A1. Fourier transform infrared spectroscopy; A1. Laser light scattering; A1. Transmission electron microscopy; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Aluminum nitride; B1. Gallium nitride; B1. Indium nitride

Indexed keywords

BOUNDARY LAYERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; LASER BEAM EFFECTS; LIGHT SCATTERING; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; QUANTUM THEORY; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM NITRIDE; LASER LIGHT SCATTERING; ORGANOMETALLIC VAPOR-PHASE EPITAXY;

ALUMINUM NITRIDE;

EID: 33846507328     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.060     Document Type: Article

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