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Volumn 287, Issue 2, 2006, Pages 566-571
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Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxy
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Author keywords
A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Aluminum nitride; B1. Gallium nitride
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Indexed keywords
ALUMINUM NITRIDE;
CHEMICAL REACTIONS;
COMPUTER SIMULATION;
DECOMPOSITION;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
METHANE;
ORGANOMETALLICS;
GA-PRECURSOR DECOMPOSITION;
ORGANOMETALLIC VAPOR PHASE EPITAXY;
PARTICLE NUCLEATION;
REACTOR CONDITIONS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 30344469376
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.077 Document Type: Conference Paper |
Times cited : (50)
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References (22)
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