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Volumn 287, Issue 2, 2006, Pages 566-571

Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxy

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Aluminum nitride; B1. Gallium nitride

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL REACTIONS; COMPUTER SIMULATION; DECOMPOSITION; EPITAXIAL GROWTH; GALLIUM NITRIDE; METHANE; ORGANOMETALLICS;

EID: 30344469376     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.077     Document Type: Conference Paper
Times cited : (50)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.