InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 465-468

  Ivanov, Sergey V ^a   Jmerik, Valentin N ^a   Shubina, Tatiana V ^a   Listoshin, Svyatoslav B ^a   Mizerov, Andrey M ^a   Sitnikova, Alla A ^a   Kim, Min Ho ^a   Koike, Masayoshi ^a   Kim, Bum Joon ^a   Kop'ev, Pyotr S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

A1. Crystal morphology; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting indium gallium nitrides; B3. Photoluminescence

Indexed keywords

EPILAYERS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

CRYSTAL MORPHOLOGY; INDIUM INCORPORATION EFFICIENCY; NITROGEN FLUX MODULATION; SEMICONDUCTING INDIUM GALLIUM NITRIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33947316408     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.008     Document Type: Article

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