Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2575-2579

  Kangawa, Y ^a   Ito, T ^b   Kumagai, Y ^a   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN SUBSTRATE; HIGH TEMPERATURE; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOLE RATIO; SOLID COMPOSITION; THERMO DYNAMIC ANALYSIS; UNSTABLE REGIONS;

SUBSTRATES; THERMOANALYSIS; THERMODYNAMIC PROPERTIES;

GALLIUM NITRIDE;

EID: 39749168523     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303538     Document Type: Conference Paper

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