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Volumn 144, Issue 5, 1997, Pages 1789-1796
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GaN growth by metallorganic vapor phase epitaxy: A comparison of modeling and experimental measurements
a b b a |
Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
GALLIUM NITRIDE;
GALLIUM COMPOUNDS;
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EID: 0031140423
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1837681 Document Type: Review |
Times cited : (86)
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References (17)
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