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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 733-739

A reaction-transport model for AlGaN MOVPE growth

(3) Mihopoulos, Theodoros G a Gupta, Vijay a Jensen, Klavs F a

a Massachusetts Institute of Technology (United States)

Author keywords

Aluminum nitride; Finite element; Kinetic mechanism

Indexed keywords

DIMERS; FINITE ELEMENT METHOD; METALLORGANIC VAPOR PHASE EPITAXY; METHANE; NUCLEATION; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMICS;

ALUMINUM GALLIUM NITRIDE; CLOSE-SPACED-INJECTOR REACTORS; LEWIS ACID-BASE ADDUCTS;

SEMICONDUCTOR GROWTH;

EID: 0032477164 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00649-6 Document Type: Article

Times cited : (190)

References (18)

1
- 0039124420
- D.T.J. Hurle (Ed.), North-Holland, Amsterdam
- K.F. Jensen, in: D.T.J. Hurle (Ed.), Handbook of Crystal Growth, vol. 3, North-Holland, Amsterdam, 1994, p. 543.
- (1994) Handbook of Crystal Growth , vol.3 , pp. 543
- Jensen, K.F.¹

2
- 0030156733
- C. Chen et al., J. Electron. Mater. 25 (1996) 1004.
- (1996) J. Electron. Mater. , vol.25 , pp. 1004
- Chen, C.¹

3
- 0003556247
- Wiley, New York
- J.O. Hirschfelder, C.F. Curtis, R.B. Bird, Molecular Theory of Gases and Liquids, Wiley, New York, 1967.
- (1967) Molecular Theory of Gases and Liquids
- Hirschfelder, J.O.¹ Curtis, C.F.² Bird, R.B.³

4
- 0000976499
- E.N. Fuller, K. Ensley, J.C. Giddings, J. Phys. Chem. 75 (1969) 3679.
- (1969) J. Phys. Chem. , vol.75 , pp. 3679
- Fuller, E.N.¹ Ensley, K.² Giddings, J.C.³

5
- 0347458465
- Ph.D. Thesis, Massachusetts Institute of Technology
- T.G. Mihopoulos, Ph.D. Thesis, Massachusetts Institute of Technology, 1998.
- (1998)
- Mihopoulos, T.G.¹

6
- 0348088484
- Gaussian, Inc., Pittsburgh, PA
- M.J. Frisch et al., Gaussian, Inc., Pittsburgh, PA, 1995.
- (1995)
- Frisch, M.J.¹

7
- 0025430748
- D.F. Davidson et al., Int. J. Chem. Kinet. 22 (1990) 513.
- (1990) Int. J. Chem. Kinet. , vol.22 , pp. 513
- Davidson, D.F.¹

8
- 0000621517
- C.H. Henrickson, D.P. Eyman, Inorg. Chem. 6 (1967) 1461.
- (1967) Inorg. Chem. , vol.6 , pp. 1461
- Henrickson, C.H.¹ Eyman, D.P.²

9
- 0000908590
- A.W. Laubengayer, W.F. Gilliam, J. Am. Chem. Soc. 63 (1941) 477.
- (1941) J. Am. Chem. Soc. , vol.63 , pp. 477
- Laubengayer, A.W.¹ Gilliam, W.F.²

10
- 0003289076
- M. Tirtowidjojo, R. Pollard, J. Crystal Growth 77 (1986) 200.
- (1986) J. Crystal Growth , vol.77 , pp. 200
- Tirtowidjojo, M.¹ Pollard, R.²

11
- 0000148088
- M.G. Jacko, S.J.W. Price, Can. J. Chem. 41 (1963) 1560.
- (1963) Can. J. Chem. , vol.41 , pp. 1560
- Jacko, M.G.¹ Price, S.J.W.²

12
- 21844438570
- B.S. Ault, J. Phys. Chem. 96 (1992) 7908.
- (1992) J. Phys. Chem. , vol.96 , pp. 7908
- Ault, B.S.¹

13
- 0001475731
- L.V. Interrante et al., Inorg. Chem. 28 (1989) 252.
- (1989) Inorg. Chem. , vol.28 , pp. 252
- Interrante, L.V.¹

14
- 0029883997
- J. Muller, J. Am. Chem. Soc. 118 (1996) 6370.
- (1996) J. Am. Chem. Soc. , vol.118 , pp. 6370
- Muller, J.¹

15
- 0030142538
- S. Rushworth et al., Adv. Mat. Opt. Electron. 6 (1996) 119.
- (1996) Adv. Mat. Opt. Electron. , vol.6 , pp. 119
- Rushworth, S.¹

16
- 0024607862
- L.V. Interrante, W. Lee, M. McConnell, J. Electrochem. Soc. 136 (1989) 472.
- (1989) J. Electrochem. Soc. , vol.136 , pp. 472
- Interrante, L.V.¹ Lee, W.² McConnell, M.³

17
- 0343616200
- F.C. Sauls, L.V. Interrante, J. Zhiping, Inorg. Chem. 29 (1990) 2989.
- (1990) Inorg. Chem. , vol.29 , pp. 2989
- Sauls, F.C.¹ Interrante, L.V.² Zhiping, J.³

18
- 0347458464
- Growth and in Situ Characterization of AlGaN/GaN on Sapphire
- Dana Point, CA
- K. Kileen et al., Growth and in Situ Characterization of AlGaN/GaN on Sapphire, in: 8th Int. Conf. on MOVPE, Dana Point, CA, 1997.
- (1997) 8th Int. Conf. on MOVPE
- Kileen, K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.