Nature of the parasitic chemistry during AlGaInN OMVPE

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 204-213

  Creighton, J Randall ^a   Wang, George T ^a   Breiland, William G ^a   Coltrin, Michael E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A1. Fourier transform infrared spectroscopy; A1. Laser light scattering; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Aluminum nitride; B1. Gallium nitride; B1. Indium nitride

Indexed keywords

ACTIVATION ENERGY; AMMONIA; ASSOCIATION REACTIONS; CONDENSATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT SCATTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PYROLYSIS; REDUCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMOPHORESIS; VAPOR PRESSURE;

ELIMINATION REACTIONS; GROWTH RATES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0346154900     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.074     Document Type: Conference Paper

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