Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 235-239

  Bergunde, T ^a   Henninger, B ^b   Lunenburger M ^c   Heuken, M ^c   Weyers, M ^a   Zettler, J T ^b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b LayTec GmbH   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

A1. Characterization; A1. Heat transfer; A3. Metalorganic vapour phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CHARACTERIZATION; HEAT TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; PYROMETERS; SENSORS; TEMPERATURE MEASUREMENT;

SURFACE TEMPERATURE;

SILICON WAFERS;

EID: 0037291773     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01856-0     Document Type: Conference Paper

References (5)

1. Planck M. Verh. Dtsch. Phys. Ges. Berlin. 2:1900;202.
2. Planck M. Verh. Dtsch. Phys. Ges. Berlin. 2:1900;237.
3. Kirchhoff, Mber. Akad. Wiss. Berlin, Dez. 1859 (s. in Gesammelte Abhandlungen. Barth, Leipzig 1882, S.566).
4. T. Zettler, K. Haberland, 2001, patent pending.
5. Haberland K., Kaluza A., Zorn M., Pristovsek M., Hardtdegen H., Weyers M., Zettler J.-T., Richter W. J. Crystal Growth. 240(1-2):2002;87.