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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 81-86

Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

(6) Steins, R a Kaluza, N a Hardtdegen, H a Zorn, M b Haberland, K c Zettler, J T c

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

c LayTec Gesell Situ/Nansosenorik mbH (Germany)

Author keywords

A1. Characterization; A1. Emissivity corrected pyrometry; A1. In situ monitoring; A1. Wafer temperature; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CHARACTERIZATION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PYROMETERS; SILICON WAFERS; SUBSTRATES; THERMOCOUPLES;

BAND GAP; EMISSIVITY CORRECTED PYROMETRY; IN-SITU MONITORING; WAFER TEMPERATURE;

SILICON CARBIDE;

EID: 9944233930 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.014 Document Type: Conference Paper

Times cited : (9)

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