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Volumn 103, Issue 3, 2008, Pages

In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS;

EID: 39349104529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2837109     Document Type: Article
Times cited : (80)

References (60)
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    • calculated in their paper (Ref.) a factor of 3 lower SE mobilities than in this paper. We want to stress that, although his Al-doped ZnO films were deposited by the same technique, the deposition conditions and reactor geometry were different, which could cause worse intrinsic film quality.
    • Groenen calculated in their paper (Ref.) a factor of 3 lower SE mobilities than in this paper. We want to stress that, although his Al-doped ZnO films were deposited by the same technique, the deposition conditions and reactor geometry were different, which could cause worse intrinsic film quality.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.