Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 233-238

  Van Den Oever, P J ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; ELLIPSOMETRY; LIGHT EMITTING DIODES; PASSIVATION; PLASMAS; QUANTUM EFFICIENCY; SILICON NITRIDE; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

GROWTH EXPONENTS; INTERNAL QUANTUM EFFICIENCY (IQE); ROUGHNESS EVOLUTION; SPECTROSCOPIC ELLIPSOMETRY;

AMORPHOUS SILICON;

EID: 12744277390     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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